INFINEON IPB25N06S3-25

IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
OptiMOS®-T2 Power-Transistor
Product Summary
V DS
55
R DS(on),max (SMD version)
24.8
ID
25
V
mΩ
A
Features
• N-channel - Enhancement mode
PG-TO263-3-2
• Automotive AEC Q101 qualified
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB25N06S3-25
PG-TO263-3-2
3N0625
IPI25N06S3-25
PG-TO262-3-1
3N0625
IPP25N06S3-25
PG-TO220-3-1
3N0625
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
25
Unit
A
23
Pulsed drain current2)
I D,pulse
T C=25 °C
50
Avalanche energy, single pulse2)
E AS
I D=12.5 A
120
mJ
Avalanche current, single pulse
I AS
25
A
Gate source voltage3)
V GS
±20
V
Power dissipation
P tot
48
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.1
55/175/56
page 1
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
3.3
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area4)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=20 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
-
1
-
1
100
V DS=55 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=15 A
-
21.6
25.1
mΩ
V GS=10 V, I D=15 A,
SMD version
-
21.3
24.8
Rev. 1.1
page 2
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
1862
-
-
283
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
270
-
Turn-on delay time
t d(on)
-
15
-
Rise time
tr
-
27
-
Turn-off delay time
t d(off)
-
16
-
Fall time
tf
-
27
-
Gate to source charge
Q gs
-
14
-
Gate to drain charge
Q gd
-
6
-
Gate charge total
Qg
-
27
41
Gate plateau voltage
V plateau
-
7.0
-
V
-
-
25
A
-
-
50
0.6
0.9
1.3
V
-
15
-
ns
-
15
-
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=27.5 V,
V GS=10 V, I D=25 A,
R G=14.8 Ω
pF
ns
Gate Charge Characteristics2)
V DD=11 V, I D=25 A,
V GS=0 to 10 V
nC
Reverse Diode2)
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
T C=25 °C
V GS=0 V, I F=25 A,
T j=25 °C
V R=27.5 V, I F=I S,
di F/dt =100 A/µs
1)
Current is limited by bondwire; with an R thJC = 3.3 K/W the chip is able to carry 30 A at 25°C. For detailed
information see Application Note ANPS071E
2)
Defined by design. Not subject to production test.
3)
Qualified at -5V and +20V.
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
60
30
50
25
40
20
I D [A]
P tot [W]
1 Power dissipation
30
15
20
10
10
5
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
100
101
1 µs
0.5
10 µs
100
100 µs
0.1
Z thJC [K/W]
I D [A]
1 ms
10
0.05
-1
10
0.01
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.1
10-7
page 4
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
50
55
5.5 V
10 V
6V
8V
40
45
7V
R DS(on) [mΩ]
I D [A]
30
7V
20
6V
35
8V
25
10
10 V
5V
0
15
0
2
4
6
8
0
10
V DS [V]
20
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 25 A; V GS = 10 V
parameter: T j
60
45
40
50
R DS(on) [mΩ]
I D [A]
35
-55 °C
40
25 °C
30
175 °C
30
25
20
20
10
15
0
0
1
2
3
4
5
6
7
8
V GS [V]
Rev. 1.1
10
-60
-20
20
60
100
140
180
T j [°C]
page 5
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
3.5
V GS(th) [V]
C [pF]
200µA
3
Ciss
20µA
103
2.5
Coss
2
Crss
1.5
102
1
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
20
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: T j(start)
100
I AV [A]
102
I F [A]
30
V DS [V]
11 Typical forward diode characteristicis
101
175 °C
100°C
150°C
25°C
10
25 °C
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.1
25
0.1
1
10
100
1000
t AV [µs]
page 6
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
66
300
64
6.25 A
250
62
60
V BR(DSS) [V]
E AS [mJ]
200
150
12.5 A
100
50
58
56
54
52
50
25 A
48
46
0
0
50
100
150
-60
200
-20
20
T j [°C]
60
100
140
180
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 25 A pulsed
parameter: V DD
12
11 V
V GS
44 V
10
Qg
V GS [V]
8
6
4
Q gate
2
Q gs
Q gd
0
0
10
20
30
40
50
Q gate [nC]
Rev. 1.1
page 7
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2007-11-07
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
Revision History
Version
Changes
Date
Data Sheet 2.1
15.12.2006 Removal of ordering code
Data Sheet 2.1
Implementation of avalanche
15.12.2006 current single pulse
Data Sheet 2.1
15.12.2006 Removal of ESD class
Data Sheet 2.1
15.12.2006 Update of Infineon address
Data Sheet 2.1
Removal of foot note 3, avalanche
15.12.2006 diagrams
Data Sheet 2.1
15.12.2006 Pulse current from 100A to 50A
Data Sheet 2.1
15.12.2006 Update of Qrr and trr
Data Sheet 2.1
15.12.2006 Update of disclaimer
Data Sheet 2.1
Implementation of RoHS and AEC
15.12.2006 logo, update of feature list
Data Sheet 1.1
07.11.2007 Update of data sheet layout
Data Sheet 1.1
07.11.2007 Adaptation of Ias
Data Sheet 1.1
implementation of footnote 2 for
07.11.2007 Eas specification
Data Sheet 1.1
removal of Vdg specification from
07.11.2007 data sheet
Rev. 1.1
page 9
2007-11-07