IRF IRF9540S

PD - 9.917A
IRF9540S
HEXFET® Power MOSFET
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Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P Channel
175°C Operating Temperature
Fast Switching
D
VDSS = -100V
RDS(on) = 0.20Ω
G
ID = -19A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
I D @ TC = 25°C
ID @ TC = 100°C
IDM
P D @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
E AR
dv/dt
TJ, TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
-19
-13
-72
150
3.7
1.0
0.025
±20
640
-19
15
-5.5
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Min.
Typ.
Max.
Units
––––
––––
––––
––––
1.0
40
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
3/21/03