IRF9540S, SiHF9540S PRODUCT SUMMARY FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC VDS (V) - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.20 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S DESCRIPTION D2PAK (TO-263) The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G G D D S P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHF9540S-GE3 IRF9540SPbF SiHF9540S-E3 D2PAK (TO-263) SiHF9540STRL-GE3a IRF9540STRLPbFa SiHF9540STL-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS VGS at - 10 V Currenta TC = 25 °C TC = 100 °C ID Pulsed Drain IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb EAS IAR Repetitive Avalanche Currenta Repetitive Avalanche Energya EAR Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = - 19 A (see fig. 12). c. ISD - 19 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material) 2014-8-28 1 LIMIT - 100 ± 20 - 19 - 13 - 72 1.0 0.025 640 - 19 15 150 3.7 - 5.5 - 55 to + 175 300d UNIT V A W/°C mJ A mJ W V/ns °C www.kersemi.com IRF9540S, SiHF9540S THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0, ID = - 250 μA - 100 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 - V/°C VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - - - 100 VDS = - 80 V, VGS = 0 V, TJ = 150 °C - - - 500 - - 0.20 6.2 - - S - 1400 - - 590 - - 140 - - - 61 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = - 11 Ab VGS = - 10 V VDS = - 50 V, ID = - 11 A gfs μA Dynamic Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 14 Gate-Drain Charge Qgd - - 29 Turn-On Delay Time td(on) - 16 - - 73 - - 34 - - 57 - - 4.5 - - 7.5 - - - - 19 S - - - 72 TJ = 25 °C, IS = - 19 A, VGS = 0 Vb - - - 5.0 Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = - 10 V ID = - 19 A, VDS = - 80 V, see fig. 6 and 13b VDD = - 50 V, ID = - 19 A, RG = 9.1 , RD = 2.4 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb V - 130 260 ns - 0.35 0.70 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. 2014-8-28 2 www.kersemi.com IRF9540S, SiHF9540S TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - ID, Drain Current (A) - ID, Drain Current (A) Top 101 - 4.5 V 25 °C 175 °C 101 20 µs Pulse Width TC = 25 °C 100 20 µs Pulse Width VDS = - 50 V 4 101 - VDS, Drain-to-Source Voltage (V) 91079_01 Fig. 1 - Typical Output Characteristics, TC = 25 °C RDS(on), Drain-to-Source On Resistance (Normalized) - ID, Drain Current (A) 101 - 4.5 V 20 µs Pulse Width TC = 175 °C 91079_02 3.0 7 8 9 10 - VDS, Drain-to-Source Voltage (V) ID = - 19 A VGS = - 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60- 40 - 20 0 101 91079_04 Fig. 2 - Typical Output Characteristics, TC = 175 °C 2014-8-28 6 Fig. 3 - Typical Transfer Characteristics VGS Top - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 100 5 - VGS, Gate-to-Source Voltage (V) 91079_03 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 3 www.kersemi.com IRF9540S, SiHF9540S 3000 Capacitance (pF) 2500 - ISD, Reverse Drain Current (A) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 2000 Ciss 1500 1000 Coss 500 Crss 101 175 °C 25 °C 100 VGS = 0 V 0 100 101 0.0 - VDS, Drain-to-Source Voltage (V) 91079_05 1.0 2.0 3.0 5.0 4.0 - VSD, Source-to-Drain Voltage (V) 91079_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 103 ID = - 19 A 16 2 VDS = - 50 V VDS = - 20 V 12 8 4 0 5 100 µs 2 1 ms 10 5 10 ms 2 1 TC = 25 °C TJ = 175 °C Single Pulse 10 20 30 40 50 2 0.1 60 0.1 QG, Total Gate Charge (nC) 91079_08 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 2014-8-28 102 5 For test circuit see figure 13 0 91079_06 Operation in this area limited by RDS(on) 5 VDS = - 80 V - ID, Drain Current (A) - VGS, Gate-to-Source Voltage (V) 20 2 5 1 2 5 10 2 5 102 2 5 103 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 4 www.kersemi.com IRF9540S, SiHF9540S + VDD D.U.T. Rg 16 - ID, Drain Current (A) L VDS 20 IAS - 10 V 12 0.01 Ω tp 8 Fig. 10a - Switching Time Test Circuit 4 td(on) 0 25 50 75 100 125 150 10 % TC, Case Temperature (°C) 91079_09 td(off) tf tr VGS 175 Fig. 9 - Maximum Drain Current vs. Case Temperature 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 PDM 0.2 0.1 0.1 t1 t2 0.05 0.02 0.01 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 91079_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 2014-8-28 5 www.kersemi.com IRF9540S, SiHF9540S IAS RD VDS VGS VDS D.U.T. Rg +VDD VDD - 10 V tp Pulse width ≤ 1 µs Duty factor ≤ 0.1 % VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 2000 ID - 7.8 A - 13 A Bottom - 19 A Top 1600 1200 800 400 VDD = - 25 V 0 25 91079_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform 2014-8-28 Fig. 13b - Gate Charge Test Circuit 6 www.kersemi.com IRF9540S, SiHF9540S Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel 2014-8-28 7 www.kersemi.com IRF9540S, SiHF9540S TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 2014-8-28 8 www.kersemi.com