ETC IRHM93160

PD - 91415E
IRHM9160
JANSR2N7425
100V, P-CHANNEL
REF: MIL-PRF-19500/660
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM9160
100K Rads (Si) 0.073Ω
ID
QPL Part Number
-35A*
JANSR2N7425
IRHM93160
-35A*
300K Rads (Si)
0.073Ω
JANSF2N7425
International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-35*
-24
-152
250
2.0
±20
500
-35
25
-16
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
C
g
For footnotes refer to the last page
*Current is limited by internal wire diameter
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1
12/20/01
IRHM9160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
—
—
V
-0.11
—
V/°C
—
—
—
—
—
—
0.073
0.075
-4.0
—
-25
-250
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
290
72
77
35
170
190
190
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6000
1400
400
—
—
—
Test Conditions
VGS = 0V, ID =-1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -22A➃
VGS = -12V, ID = -35A➃
VDS = VGS, ID = -1.0mA
VDS >-15V, IDS = -22A ➃
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -35A
VDS = -50V
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
15
IDSS
Zero Gate Voltage Drain Current
—
—
µA
nA
nC
VDD = -50V, ID = -35A,
VGS =-12V, RG = 2.35Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
-35*
-140
A
VSD
t rr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.3
300
2.1
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = -35A, VGS = 0V ➃
Tj = 25°C, IF = -35A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by internal wire diameter
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.50
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM9160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-254AA)
Diode Forward Voltage ➃
Units
300K Rads (Si)2
Test Conditions
Min
Max
Min
Max
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.073
-100
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.073
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS=-80V, VGS =0V
VGS = -12V, ID =-22A
—
0.073
—
0.073
Ω
VGS = -12V, ID =-22A
—
-3.3
—
- 3.3
V
VGS = 0V, IS = -35A
V
nA
1. Part number IRHM9160 (JANSR2N7425)
2. Part number IRHM93160 (JANSF2N7425)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LE T
MeV/(mg/cm²))
Energy
(MeV)
VD S(V)
Range
(µm)
@VGS=0V
@VGS=5V
@VGS=10V
@VGS=15V
@VGS=20V
Cu
28
285
43
-100
-100
-100
-70
-60
Br
36.8
305
39
-100
-100
-70
-50
-40
I
59.9
345
32.8
-60
—
—
—
—
-120
-100
VDS
-80
Cu
-60
Br
-40
I
-20
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9160
1000
Pre-Irradiation
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
100
-5.0V
20µs PULSE WIDTH
TJ = 25 °C
10
1
10
100
V DS = -50V
20µs PULSE WIDTH
6
7
8
9
10
Fig 3. Typical Transfer Characteristics
11
R DS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 150 ° C
--I D ,
Drain-to-Source Current (A)
TJ = 25 ° C
--VGS , Gate-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
5
10
-VDS , Drain-to-Source Voltage (V)
1000
10
1
Fig 1. Typical Output Characteristics
100
-5.0V
20µs PULSE WIDTH
TJ = 150 °C
10
-VDS , Drain-to-Source Voltage (V)
4
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
-38A
ID = -35A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs.Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Ciss
6000
4000
C
oss
2000
Crss
20
-VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
IRHM9160
VDS =-80V
VDS =-50V
VDS =-20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
50
100
150
200
250
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
ID = -35A
100
100
TJ = 150 ° C
10
TJ = 25 ° C
1ms
10
V GS = 0 V
1
0.0
1.0
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5.0
100us
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM9160
Pre-Irradiation
40
LIMITED BY PACKAGE
VGS
32
-ID , Drain Current (A)
RD
V DS
D.U.T.
RG
+
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
24
16
Fig 10a. Switching Time Test Circuit
8
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM9160
L
VDS
IA S
tp
VD D
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
D .U .T
RG
-20V
VGS
1200
ID
-17A
-25A
BOTTOM -35A
TOP
1000
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-12V
12V
.2µF
.3µF
-12V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM9160
Pre-Irradiation
Foot Notes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -25V, starting TJ = 25°C, L=0.82mH
Peak IL = -35A, VGS =-12V
➂ ISD ≤ -35A, di/dt ≤ -480A/µs,
VDD ≤ -100V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
B
C
2
22.73 [.895]
21.21 [.835]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
2X
3.81 [.150]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
3
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
B A
NOT ES :
1.
2.
3.
4.
2
3
3X
3.81 [.150]
1.27 [.050]
1.02 [.040]
A
1
1
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
DIME NS IONING & T OLE RANCING PE R AS ME Y14.5M-1994.
ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHES ].
CONT ROLLING DIME NS ION: INCH.
CONFORMS T O JEDEC OUT LINE TO-254AA.
PIN AS S IGNME NT S
1 = DRAIN
2 = S OURCE
3 = GAT E
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/01
8
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