IRF IRLU3103

PD - 9.1333B
IRLR/U3103
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3103)
Straight Lead (IRLU3103)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = 30V
RDS(on) = 0.019Ω
G
ID = 46A…
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
D -P A K
T O -2 52 A A
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
I-P A K
TO -2 5 1 A A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚‡
Avalanche Current‡
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
46…
29…
220
69
0.56
±16
240
34
6.9
2.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
Min.
Typ.
RθJC
Junction-to-Case
––––
––––
RθJA
Junction-to-Ambient (PCB mount)**
––––
––––
RθJA
Junction-to-Ambient
––––
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
Units
1.8
50
110
°C/W
8/7/96
IRLR/U3103
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
Min.
30
–––
–––
–––
1.0
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.037
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.0
210
20
54
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.019
VGS = 10V, ID = 28A „
Ω
0.024
VGS = 4.5V, I D = 23A „
–––
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, I D = 34A‡
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 125°C
100
V GS = 16V
nA
-100
VGS = -16V
50
ID = 34A
14
nC VDS = 24V
28
V GS = 4.5V, See Fig. 6 and 13 „‡
–––
VDD = 15V
–––
I D = 34A
ns
–––
RG = 3.4Ω, VGS = 4.5V
–––
RD = 0.43Ω, See Fig. 10 „‡
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact †
––– 1600 –––
VGS = 0V
––– 640 –––
pF
VDS = 25V
––– 320 –––
ƒ = 1.0MHz, See Fig. 5‡
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ‡
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 46…
showing the
A
G
integral reverse
––– ––– 220…
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 28A, VGS = 0V „
––– 81 120
ns
TJ = 25°C, IF = 34A
––– 210 310
nC
di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Specification changes
Rev. #
Parameters Old spec.
New spec.
Comments
Revision Date
1
VGS(th) (Max.)
2.5V
No spec.
Removed VGS(th) Max. Specification
5/1/96
±20
±16
Decrease VGS Max. Specification
5/1/96
1
VGS (Max.)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 ) … Caculated continuous current based on maximum allowable junction temperature;
‚ VDD = 15V, starting TJ = 25°C, L = 300µH
Package limitation current = 20A.
RG = 25Ω, IAS = 34A. (See Figure 12)
† This is applied for I-PAK, LS of D-PAK is measured between lead and center of
ƒ I SD ≤ 34A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS ,
die contact
‡ Uses IRL3103 data and test conditions.
TJ ≤ 150°C
IRLR/U3103
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rce C u rre n t (A )
TOP
100
10
100
10
2.5 V
2.5 V
20 µ s PU LSE W ID TH
T J = 2 5°C
1
0.1
1
10
2 0µ s PU L SE W ID TH
T J = 1 50 °C
1
A
100
0.1
1
V D S , Drain-to-Source V oltage (V )
Fig 2. Typical Output Characteristics,
T J = 150o C
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
1000
T J = 2 5 °C
TJ = 1 5 0 ° C
10
V DS = 1 5 V
2 0 µ s P U L S E W ID T H
1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
A
100
V D S , Drain-to-S ource Voltage (V )
Fig 1. Typical Output Characteristics,
T J = 25oC
100
10
9.0
V G S , G ate-to -S ource V olta ge (V )
Fig 3. Typical Transfer Characteristics
A
I D = 46 A
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLR/U3103
2800
C iss
C , C a p a c ita n c e (p F )
2400
V GS
C is s
C rs s
C os s
=
=
=
=
15
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
3200
C os s
2000
1600
1200
C rs s
800
I D = 34A
V DS = 2 4V
V DS = 1 5V
12
9
6
3
400
0
0
A
1
10
FO R TEST CIR CU IT
SEE FIG UR E 13
0
100
V D S , Drain-to-Source V oltage (V)
20
30
40
50
60
A
70
Q G , T otal Gate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
10
100
TJ = 15 0°C
T J = 25 °C
10µ s
100
1 00µs
10
1m s
10m s
VG S = 0 V
10
0.4
0.8
1.2
1.6
2.0
2.4
A
2.8
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
T C = 25 °C
T J = 15 0°C
S ing le Pulse
1
1
A
10
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRLR/U3103
50
RD
VDS
L IM IT E D B Y P A C K A G E
VGS
I D , D ra in C u rre n t (A m p s)
40
D.U.T.
RG
+
- VDD
30
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
A
0
25
50
75
100
125
150
TC , Case Temperature (°C )
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Therm al R esp onse (Z thJC )
10
1
D = 0.50
0 .2 0
0 .1 0
PD M
0 .0 5
0.1
t
0 .0 2
0 .0 1
t2
S IN G L E P U L S E
(T HE RM A L R E S P O NS E )
0.01
0.00001
1
N o te s :
1 . D u ty fa c to r D = t
1
/ t
2
2. P e a k T J = P DM x Z t h J C + T C
0.0001
0.001
0.01
0.1
t 1 , Rectan gular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
IRLR/U3103
D.U.T.
RG
+
V
- DD
IAS
4.5 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
500
L
VDS
TO P
B OTTO M
400
300
200
100
VD D = 1 5V
0
25
tp
A
50
75
100
125
Starting T J , Junction Temperature (°C)
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
4.5 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
15 A
2 1A
34 A
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
150
IRLR/U3103
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
•
•
•
•
+
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
Period
P.W.
„
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
ISD
*
IRLR/U3103
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
10.42 (.410)
9.40 (.370)
1
2
LEA D AS SIG NME NT S
1 - G AT E
3
0.51 (.020)
MIN.
-B 1.52 (.060)
1.15 (.045)
3X
1.14 (.045)
2X 0.76 (.030)
0.89 (.035)
0.64 (.025)
0.25 ( .010)
2.28 (.090)
4.57 (.180)
2 - DRA IN
3 - S OUR CE
4 - DRA IN
0.58 (.023)
0.46 (.018)
M A M B
NOT ES:
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS ION : INCH.
3 CO NFO RMS T O JEDE C O UTLINE TO -252AA .
4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP ,
SO LDER DIP MA X. +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
E XA M PL E : T HIS IS AN IR F R1 20
W IT H AS S EM B LY
L OT C OD E 9 U 1P
INT ER N AT IO N A L
R E CT IF IE R
L O GO
A
IR F R
1 20
9U
AS S EM B LY
L OT CO D E
FIR ST P O RT IO N
OF P A RT N U MB E R
1P
S E CO N D P O RT ION
O F PA R T NU M BE R
IRLR/U3103
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
-A-
0.58 (.023)
0.46 (.018)
1.27 ( .050)
0.88 ( .035)
5.46 (.215)
5.21 (.205)
LEAD AS SIG NMENT S
4
1 - G AT E
2 - DRA IN
6.45 (.245)
5.68 (.224)
3 - S OURCE
4 - DRA IN
6.22 ( .245)
5.97 ( .235)
1.52 ( .060)
1.15 ( .045)
1
2
3
-B -
NOT ES :
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982.
2.28 (.090)
1.91 (.075)
2 CO NTRO LLIN G DIMENS ION : INCH.
3 CO NFO RMS TO J EDE C O UT LINE TO -252AA .
9.65 (.380)
8.89 (.350)
4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP ,
SO LDER DIP MA X. +0.16 (.006).
3X
1.14 (.045)
0.76 (.030)
2.28 (.090)
3X
1.14 (.045)
0.89 (.035)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2X
M A M B
0.58 (.023)
0.46 (.018)
Part Marking Information
TO-251AA (I-PARK)
E XA M P LE : TH IS IS A N IR FU 1 20
W ITH A S SE M B LY
L O T C OD E 9 U1 P
INT E RN AT ION A L
R EC T IFIER
LO GO
IRF U
12 0
9U
AS S E MB L Y
L OT C OD E
F IRS T P O RT IO N
O F P A RT N U M BE R
1P
S EC O ND PO R TIO N
OF P AR T N U MB E R
IRLR/U3103
Tape & Reel Information
TO-252AA
Dimensions are shown in millimeters (inches)
TR
TRR
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
1 2.1 ( .47 6 )
1 1.9 ( .46 9 )
F E E D D IR E C T IO N
TR L
16 .3 ( .6 4 1 )
15 .7 ( .6 1 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
FE E D D IR E C TIO N
N O TE S :
1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 .
1 3 IN C H
16 m m
NO T ES :
1 . O U T LIN E C O N F O R M S T O E IA -4 81 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/96