IS354 HIGH DENSITY MOUNTING AC INPUT, PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS354 is an optically coupled isolator consisting of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a space efficient dual in line plastic package. Dimensions in mm FEATURES l Marked as FPA1. l Current Transfer Ratio MIN. 20% Isolation Voltage (3.75kVRMS ,5.3kVPK ) All electrical parameters 100% tested Drop in replacement for Sharp PC354 l l l APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 22/4/02 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92856l-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation ±50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.26mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Output Coupled MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 5 1.2 Collector-emitter Breakdown (BVCEO) 35 Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 6 Current Transfer Ratio (CTR) 20 22/4/02 IF = ±20mA IR = 10µA VR = 4V V IC = 0.1mA 100 V nA IE = 10uA VCE = 20V 400 % ±1mA IF , 5V VCE 0.2 V ±20mA IF , 1mA IC VRMS VPK See note 1 See note 1 Ω µs µs VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω 3750 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 V V µA 10 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 1.4 4 3 TEST CONDITION 18 18 Measured with input leads shorted together and output leads shorted together. DB92856l-AAS/A3 TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment 12/07/01 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) Appendix to Mini Flat Pack FPA-AAS/A1 CHARACTERISTIC CURVES Fig.2 Collector Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 200 Collector power dissipation Pc (mW) Forward current I F (mA) 60 50 40 30 20 10 0 -55 0 25 50 75 100 125 150 100 50 0 -55 0 125 Ta= 75 C 50 C o o 200 25 C 0C -25 C o 100 o F (mA) o 7mA 3 2 50 20 10 5 1 2 0 1 0 2.5 5.0 7.5 10.0 12.5 15.0 0 0.5 Fig.5 Current Transfer Ratio vs. Forward Current 140 10 15 20 30 Fig.6 Collector Current vs. Collector-emitter Voltage 50 VCE= 5V Ta= 25 C o Ta= 25 C o Collector current Ic (mA) 120 25 Forward voltage V F (V) Forward current I F (mA) Current transfer ratio CTR (%) 100 500 O Ta= 25 C Forward current I Collector-emitter saturation voltage VCE (sat) (V) 4 75 Fig.4 Forward Current vs. Forward Voltage 6 5 50 Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current Ic= 0.5mA 1mA 3mA 5mA 25 o o Ambient temperature Ta ( C) 100 80 60 40 40 I F = 30mA Pc(MAX.) 30 20mA 20 10mA 10 5mA 20 1mA 0 0.1 0.2 0 0.5 1 2 5 10 20 Forward current I F (mA) 12/07/01 50 100 0 1 2 3 4 5 6 7 8 9 10 Collecotr-emitter voltage V CE (V) Appendix to Mini Flat Pack FPA-AAS/A1 CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.10 Relative current transfer ratio (%) I F = 1mA, V CE = 5V 100 50 Collector-emitter saturation voltage VCE(sat) (V) 150 I F = 20mA I C = 1mA 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 20 o 100 VCE= 20V (nA) 50 20 Response time ( s) CEO Collector Dark Current I 100 80 Fig.10 Response Time vs. Load Resistance 1000 100 10 VCE = 2V Ic = 2mA o Ta= 25 C tr tf 10 5 td 2 ts 1 0.5 0.2 1 0.1 20 40 60 80 100 0.1 0.2 o Ambient Temperature Ta ( C) 0.5 1 2 5 10 Load resistance R L (k ) Fig.11 Frequency Response Test Circuit for Response Time V = 2V Ic= 2mA o Ta= 25 C 0 Voltage gain Av (dB) 60 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. vs. Ambient Temperature 10000 40 o Ambient temperature Ta ( C) Input Vcc Output Input RD RL 10% Output 90% td R L = 1k ts tr 1k tf 100 -10 Test Circuit for Frequency Response Vcc RD RL Output -20 0.2 0.5 1 2 5 10 100 1000 Frequency f (kHz) 12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1 TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 230 C 200 C 180 C 1 minute 25 C 2 minutes 1.5 minutes 1 minute (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1