IXYS IXGR32N60C

IXGR 32N60C
HiPerFASTTM IGBT
Lightspeed Series
VCE
IC25
VCE(sat)
tfi typ
ISOPLUS247TM package
(Electrically Isolated Back Side)
= 600 V
= 45 A
= 2.7 V
= 55 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
45
A
IC110
TC = 110°C
26
A
ICM
TC = 25°C, 1 ms
120
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 100 µH
PC
TC = 25°C
ICM = 64
@ 0.8 VCES
A
140
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
VISOL
300
°C
2500
V
6
g
ISOPLUS 247TM
E153432
G
Weight
E
G = Gate,
E = Emitter
Isolated Backside*
C = Collector,
*Patent pending
Features
z
z
z
z
50/60 Hz, RMS, t = 1minute leads-to-tab
C
z
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 250 µA, VCE = VGE
VGE(th)
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 600 V, VGE = ±20 V
2.5
TJ = 25°C
TJ = 150°C
5
V
200
1
µA
mA
±100
nA
z
z
z
Advantages
z
z
VCE(sat)
IC
= IT, VGE = 15 V (see note 1)
© 2004 IXYS All rights reserved
2.3
2.7
V
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
z
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
DS98651C(06/04)
IXGR 32N60C
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IT; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
25
S
2700
pF
190
pF
50
pF
110
nC
22
nC
40
nC
Cres
Qg
Qge
IC = IT, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
25
ns
tri
IC = IT, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
20
ns
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
85
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
ns
0.32
0.75 mJ
25
ns
25
ns
0.30
mJ
110
ns
105
ns
0.85
mJ
RthJC
0.90 K/W
RthCK
Note 1:
0.15
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
ns
55
Inductive load, TJ = 150°°C
IC = IT, VGE = 15 V, L = 100 µH
170
ISOPLUS 247 OUTLINE
K/W
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
IT = 32A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
IXGR 32N60C
200
100
VGE = 15V
13V
TJ = 25°C
11V
VGE = 15V
160
IC - Amperes
80
IC - Amperes
TJ = 25°C
9V
60
40
7V
13V
11V
120
9V
80
7V
40
20
5V
0
0
0
1
2
3
4
5
5V
0
2
4
8
10
VCE - Volts
VCE - Volts
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
100
1.50
11V
TJ = 125°C VGE = 15V
VGE = 15V
VCE (sat) - Normalized
9V
13V
80
IC - Amperes
6
60
7V
40
20
IC = 64A
1.25
IC = 32A
1.00
IC = 16A
0.75
5V
0
0
1
2
3
4
0.50
5
25
50
75
VCE - Volts
100
125
150
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
10000
VCE = 10V
f = 1Mhz
Ciss
Capacitance - pF
IC - Amperes
80
60
40
TJ = 125°C
1000
Coss
Crss
100
20
TJ = 25°C
0
3
4
5
6
7
VGE - Volts
Fig. 5. Admittance Curves
© 2004 IXYS All rights reserved
8
9
10
10
0
5
10
15
20
25
VCE-Volts
Fig. 6. Capacitance Curves
30
35
40
IXGR 32N60C
1.00
TJ = 125°C
4
3
3
8
TJ = 125°C
2
0.50
1
0.25
IC = 64A
E(OFF)
2
4
E(ON)
0
20
40
0
0
60
80
0
10
IC = 16A
20
2
E(OFF)
30
40
50
0
60
RG - Ohms
IC - Amperes
Fig. 8. Dependence of EON and EOFF on RG.
Fig. 7. Dependence of EON and EOFF on IC.
100
16
64
IC = 32A
VCE = 300V
IC - Amperes
12
VGE - Volts
E(OFF)
IC = 32A
1
E(ON)
0.00
6
E(ON)
8
TJ = 125°C
10
RG = 4.7Ω
dV/dt < 5V/ns
1
4
0
0
25
50
75
100
0.1
125
0
100
200
300
400
500
600
VCE - Volts
Qg - nanocoulombs
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
1
D=0.5
ZthJC (K/W)
D=0.2
0.1 D=0.1
D=0.05
D=0.02
0.01
D=0.01
D = Duty Cycle
Single pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
0.1
1
10
E(OFF) - millijoules
E(ON)
E(OFF) - milliJoules
0.75
E(ON) - millijoules
RG = 10Ω
E(ON) - millijoules
4
E(OFF)