LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGHT BAR LED DISPLAY Pb Lead-Free Parts LBD511SGL-XX-PF DATA SHEET DOC. NO : QW0905- LBD511SGL-XX-PF REV. : A DATE : 15 - Aug. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD511SGL-XX-PF Page 1/7 Package Dimensions 15.0 PIN 1 15.0 5.08 (0.2") 13.5 2 LBD511SGL-XX-PF LIGITEK 11.2 Ø0.51 TYP 7.0±0.5 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD511SGL-XX-PF Page 2/7 Internal Circuit Diagram LBD511SGL-XX-PF 2 1 1.CATHODE 2.ANODE Electrical Connection PIN NO.1 LBD511SGL-XX-PF 1 Cathode 2 Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO.LBD511SGL-XX-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SGL Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 120 mW Ir 50 μA Reverse Current Per Any Chip Electrostatic Discharge( * ) ESD 1000 V Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) Electrical Material common λP λD △λ Vf(v) Iv(mcd) IV-M cathode (nm) (nm) (nm) Typ. Max. Min. Typ. Emitted or anode InGaN/SiC Green CHIP PART NO LBD511SGL-XX-PF Common Cathode 502 505 30 3.5 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 4.2 58 91 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD511SGL-XX-PF Page 4/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=20mA Peak Wavelength λP nm If=20mA Dominant Wavelength λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD511SGL-XX-PF Page5/7 Typical Electro-Optical Characteristics Curve SGL CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1.5 Relative Intensity Normalize @20mA Forward Current(mA) 25 20 10 15 5 0 1.0 0.5 0.0 1.5 2.0 2.5 3.0 3.5 4.0 0 Fig.3 Forward Current vs. Ambient Temp 30 20 10 0 40 80 60 100 Ambient Temperature Ta(℃) Relative Intensity@20mA 1.0 0.5 0.0 400 500 Wavelength (nm) 25 2.0 1.5 1.0 0.5 0.0 25 30 35 40 45 50 55 60 65 Ambient Temperature Ta(℃) Fig.5 Relative Intensity vs. Wavelength 300 20 Fig.4 Relative Intensity vs. Ambient Temp Relative Luminous Intensity(a.u.) Forward Current(mA) 40 20 15 Forward Current(mA) Forward Voltage(V) 0 10 5 600 70 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LBD511SGL-XX-PF Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C Temp(°C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD511SGL-XX-PF Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11