ETC LDT2369AT

PRODUCT DATA
Micro International, Inc
PART NUMBER
LDT2369A and LDT2369AT
Micro-LID NPN Transistor
Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
www.microlid.com
[email protected]
Micro-LID Transistors
LDT2369A and LDT2369AT
Description:
The LDT2369A (untinned) and LDT2369AT (tinned) are NPN silicon transistors in
very small, rugged, surface mount, 4-post ceramic packages (Micro International
manufactured package p/n 4-075-1). The LDT2369A and LDT2369AT meet the
general specifications of the 2N2369A transistor. The 4-075-1 Micro-LID package
is a 4-post, leadless ceramic carrier which can be provided with gold metallized
or pre-tinned lands, and is approved for military, medical implant, sensor, and
high reliability applications. The LDT2369A and LDT2369AT can be provided
with special feature options such as additional temperature cycling and
screening.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
40 V
Collector-Emitter Voltage
Vceo
15 V
Emitter-Base Voltage
Vebo
4.5 V
Collector Current
Ic
200 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150°C
Storage Temperature
Tstg
-65°C to 150°C
Operating Temperature
Toper
-55°C to 125°C
1/3 January 1997
www.microlid.com
[email protected]
Micro-LID Transistors
LDT2369A and LDT2369AT
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3
3, 4
2
2
.040
1
1
4
.075
END VIEW
SIDE VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075′
′+ .003′
′
.040′
′+ .003′
′
.035′
′+ .003′
′
Post 1 (Emitter)
Post 2 (Base)
Post 3,4 (Collector)
.015′
′x .010′
′typ
.015′
′x .010′
′typ
.015′
′x .012′
′typ
Marking on back of package : Yellow Dot over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Ø
Semiconductor die and Micro-LID package visual inspection
Ø
Wire pull test
Ø
24 hour stabilization bake at 150°C
Ø
10 temperature cycles from –55°C to 125°C
Ø
100% electrical test of dc characteristics at 25°C
Ø
Final visual inspection
________________________________________________________________
2/3 January 1997
www.microlid.com
[email protected]
Micro-LID Transistors
LDT2369A and LDT2369AT
Electrical Characteristics (25°C Ambient)
Parameter
Symbol
Min
Typ
Max
Collector-Base Breakdown
Ic = 10 uA, Ie = 0
BVcbo
40
--
--
V
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
BVceo
15
--
--
V
Emitter-Base Breakdown
Ic = 0, Ie = 10 uA
BVebo
4.5
--
--
V
Collector-Base Cutoff Current
Vcb = 20 V
Icbo
--
--
500
DC Forward Current Gain*
Ic = 10 mA, Vce =1 V
Hfe
40
--
120
Collector-Emitter Saturation
Ic = 10 mA, Ib = 1 mA
Vce (sat)
--
--
.3
V
Base-Emitter Saturation
Ic =10 mA, Ib = 1 mA
Vbe (sat)
--
--
.9
V
Collector Capacitance
Vcb = 10 V, Ie = 0
f = 1 MHz
Cobo
--
--
4
pF
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 January 1997
Units
nA