SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • CECC SCREENING OPTIONS A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) 1.40 (0.055) max. APPLICATIONS: Hermetically sealed surface mount version of the popular 2N2369A for high reliability / space applications requiring small size and low weight devices. SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 40V VCEO Collector – Emitter Voltage 15V VEBO Emitter – Base Voltage 4.5V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C TSTG , TJ Semelab plc. Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 360mW 2.06mW / °C 680mW 6.85mW / °C –65 to +200°C Prelim. 3/00 SEME 2N2369ACSM LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA 15 V V(BR)CBO Collector – Base Breakdown Voltage IC = 10mA 40 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA 4.5 V ICES Collector – Emitter Cut-off Current VCE = 20V 0.40 VCE = 10V 0.30 TA = +150°C ICBO Collector – Base Cut-off Current IEBO Emitter – Base Cut-off Current VCE(sat) VBE(sat) hFE* Collector – Emitter Saturation Voltage |hfe| Magnitude of hfe Cob Output Capacitance 0.20 TA = +125°C 30 VEB = 4V 0.25 IB = 1mA 0.20 TA = +150°C 0.30 IC = 30mA IB = 3mA 0.25 IC = 100mA IB = 10mA 0.43 IC = 10mA TA = +25°C 0.70 IB = 1mA TA = +150°C 0.59 Base – Emitter Saturation Voltage Current Gain 30 VCB = 20V IC = 10mA 1.02 IC = 30mA IB = 3mA 0.90 IC = 100mA IB = 10mA 1.20 IC = 10mA VCE = 0.35V 40 120 IC = 30mA VCE = 0.40V 30 120 IC = 10mA VCE = 1V 40 120 TA = –55°C 20 IC = 100mA VCE = 1V 20 120 IC = 10mA VCE = 10V 5 10 VCB = 5V IE = 0 f = 100kHz to 1MHz VEB = 0.5V Cib Input Capacitance ts Storage Time ton Turn–On Time IC = 10mA toff Turn–Off Time IB1 = 3mA IC = 0 f = 100kHz to 1MHz IC = 10mA IB1 = –IB2 = 10mA mA V V — — 4 pF 5 13 12 IB2 = –1.5mA mA 0.85 TA = –55°C f = 100MHz mA 18 ns ns * Pulse Test: tp £ 300ms, d £ 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/00