PRODUCT DATA Micro International, Inc PART NUMBER LDT3019 and LDT3019T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors LDT3019 and LDT3019T Description: The LDT3019 (untinned) and LDT3019T (tinned) are NPN silicon transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDT3019 and LDT3019T meet the general specifications of the 2N3019 transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDT3019 and LDT3019T can be provided with special feature options such as additional temperature cycling and screening. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 140 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage Vebo 7V Collector Current Ic 600 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150°C Storage Temperature Tstg -65°C to 150°C Operating Temperature Toper 55°C to 125°C 1/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT3019 and LDT3019T ______________________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075′ ′+ .003′ ′ .040′ ′+ .003′ ′ .035′ ′+ .003′ ′ Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015′ ′x .010′ ′typ .015′ ′x .010′ ′typ .015′ ′x .012′ ′typ Marking on back of package : Red Diagonal Stripe over Emitter and Red Dot in Center (post down configuration) Standard In-Process Screening Requirements: Ø Semiconductor die and Micro-LID package visual inspection Ø Wire pull test Ø 24 hour stabilization bake at 150°C Ø 10 temperature cycles from –55°C to 125°C Ø 100% electrical test of dc characteristics at 25°C Ø Final visual inspection ________________________________________________________________ 2/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT3019 and LDT3019T Electrical Characteristics (25°C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 10 uA, Ie = 0 BVcbo 140 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 10 mA BVceo 80 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 10 uA BVebo 7 -- -- V Collector-Base Cutoff Current Vcb = 90 V Icbo -- -- 10 nA Emitter-Base Cutoff Current Veb = 3 V Iebo -- -- 10 nA DC Forward Current Gain* Ic = 150 mA, Vce = 10 V Hfe 100 -- 300 Collector-Emitter Saturation Ic = 100 mA, Ib = 10 mA Vce (sat) -- -- .25 V Base-Emitter Saturation Ic =100 mA, Ib = 10 mA Vbe (sat) -- -- 1 V Collector Capacitance Vcb = 10 V, Ie = 0 f = 1 MHz Cobo -- -- 20 pF * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 January 1997 Units