STMICROELECTRONICS M27C1024

M27C1024
1 Mbit (64Kb x16) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
FAST ACCESS TIME: 35ns
LOW POWER CONSUMPTION:
– Active Current 35mA at 5MHz
– Standby Current 100µA
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
PROGRAMMING TIME: 100µs/byte (typical)
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 008Ch
DESCRIPTION
The M27C1024 is a 1 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for microprocessor systems requiring large data or program
storage and is organized as 65,536 words of 16
bits.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to
expose the chip to ultraviolet light to erase the bit
pattern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27C1024 is offered in PDIP40, PLCC44 and
TSOP40 (10 x 14mm) packages.
Table 1. Signal Names
A0-A15
Address Inputs
Q0-Q15
Data Outputs
E
Chip Enable
G
Output Enable
P
Program
VPP
Program Supply
VCC
Supply Voltage
VSS
Ground
September 1998
40
40
1
1
FDIP40W (F)
PDIP40 (B)
PLCC44 (C)
TSOP40 (N)
10 x 14mm
Figure 1. Logic Diagram
VCC
VPP
16
16
A0-A15
P
Q0-Q15
M27C1024
E
G
VSS
AI00702B
1/15
M27C1024
Figure 2A. DIP Pin Connections
VCC
P
NC
A15
A14
A13
A12
A11
A10
A9
VSS
A8
A7
A6
A5
A4
A3
A2
A1
A0
Q13
Q14
Q15
E
VPP
NC
VCC
P
NC
A15
A14
1
40
2
39
3
38
4
37
5
36
6
35
7
34
8
33
9
32
10
31
M27C1024
30
11
12
29
13
28
14
27
15
26
16
25
17
24
18
23
19
22
20
21
1 44
Q12
Q11
Q10
Q9
Q8
VSS
NC
Q7
Q6
Q5
Q4
12
M27C1024
34
A13
A12
A11
A10
A9
VSS
NC
A8
A7
A6
A5
23
Q3
Q2
Q1
Q0
G
NC
A0
A1
A2
A3
A4
VPP
E
Q15
Q14
Q13
Q12
Q11
Q10
Q9
Q8
VSS
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
G
Figure 2B. LCC Pin Connections
AI00704
AI00703
Warning: NC = Not Connected.
Warning: NC = Not Connected.
Figure 2C. TSOP Pin Connections
DEVICE OPERATION
The modes of operations of the M27C1024 are
listed in the OperatingModes table. A single power
supply is required in the read mode. All inputs are
TTL levels except for Vpp and 12V on A9 for
Electronic Signature.
Read Mode
The M27C1024 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, independent of device selection. Assuming that the
addresses are stable, the address access time
(tAVQV) is equalto the delay from E to output (tELQV).
Data is available at the output after a delay of tOE
from the falling edge of G, assuming that E has
been low and the addresses have been stable for
at least t AVQV-tGLQV.
Standby Mode
The M27C1024 has a standby mode which reduces the active current from 35mA to 100µA.
The M27C1024 is placed in the standby mode by
applying a TTL high signal to the E input. When in
the standby mode, the outputs are in a high impedance state, independent of the G input.
A9
A10
A11
A12
A13
A14
A15
NC
P
VCC
VPP
E
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
1
10
11
40
M27C1024
(Normal)
20
31
30
21
AI01582
Warning: NC = Not Connected.
2/15
VSS
A8
A7
A6
A5
A4
A3
A2
A1
A0
G
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VSS
M27C1024
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Ambient Operating Temperature
TA
Value
(3)
Unit
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
Input or Output Voltages (except A9)
–2 to 7
V
Supply Voltage
–2 to 7
V
A9 Voltage
–2 to 13.5
V
Program Supply Voltage
–2 to 14
V
VIO
(2)
VCC
VA9
(2)
VPP
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
E
G
P
A9
VPP
Q0 - Q15
Read
VIL
VIL
VIH
X
VCC or VSS
Data Output
Output Disable
VIL
VIH
X
X
VCC or VSS
Hi-Z
Program
VIL
X
VIL Pulse
X
VPP
Data Input
Verify
VIL
VIL
VIH
X
VPP
Data Output
Program Inhibit
VIH
X
X
X
VPP
Hi-Z
Standby
VIH
X
X
X
VCC or VSS
Hi-Z
Electronic Signature
VIL
VIL
VIH
VID
VCC
Codes
Note: X = VIH or VIL, VID = 12V ±0.5V
Table 4. Electronic Signature
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH
1
0
0
0
1
1
0
0
8Ch
Note: Outputs Q8-Q15 are set to ’0’.
3/15
M27C1024
Table 5. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤ 10ns
≤ 20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
1.5V
0.8V and 2V
Input and Output Timing Ref. Voltages
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed
1N914
3V
1.5V
3.3kΩ
0V
DEVICE
UNDER
TEST
Standard
2.4V
OUT
CL
2.0V
0.8V
0.4V
CL = 30pF for High Speed
CL = 100pF for Standard
AI01822
CL includes JIG capacitance
AI01823B
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
C IN
COUT
Parameter
Test Condition
Input Capacitance
Output Capacitance
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
Note: 1. Sampled only, not 100% tested.
Two Line Output Control
BecauseEPROMs are usually used in largermemory arrays, this product features a 2 line control
function which accommodates the use of multiple
memory connection. The two line control function
allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficientuse of thesetwo controllines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
4/15
control bus. This ensures that all deselected memory devices are in their low power standby mode
and that the output pins are only active when data
is required from a particular memory device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three segments that are of interest to the system designer :
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
transientcurrent peaks is dependenton the capacitive and inductive loading of the device at the
output.
M27C1024
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70 °C, –40 to 85 °C; –40 to 105 °C or –40 to 125 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
ICC2
Supply Current (Standby) CMOS
IPP
Program Current
VIL
Input Low Voltage
Input High Voltage
VIH
(2)
VOL
VOH
Output Low Voltage
Min
Max
Unit
0V ≤ VIN ≤ VCC
±10
µA
0V ≤ VOUT ≤ VCC
±10
µA
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
35
mA
E = VIH
1
mA
E > VCC – 0.2V
100
µA
VPP = VCC
100
µA
–0.3
0.8
V
2
VCC + 1
V
0.4
V
IOL = 2.1mA
Output High Voltage TTL
IOH = –400µA
2.4
V
Output High Voltage CMOS
IOH = –100µA
VCC – 0.7
V
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after V PP.
2. Maximum DC voltage on Output is VCC +0.5V.
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C, –40 to 85 °C; –40 to 105 °C or –40 to 125 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
M27C1024
Symbol
Alt
Parameter
Test Condition
-35 (3)
-45 (3)
-55 (3)
Unit
Min Max Min Max Min Max
tAVQV
tACC
Address Valid to Output Valid
E = VIL, G = VIL
35
45
55
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
35
45
55
ns
tGLQV
20
25
30
ns
tOE
Output Enable Low to Output Valid
E = VIL
(2)
tDF
Chip Enable High to Output Hi-Z
G = VIL
0
30
0
30
0
30
ns
tGHQZ (2)
tDF
Output Enable High to Output Hi-Z
E = VIL
0
30
0
30
0
30
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL, G = VIL
0
tEHQZ
0
0
ns
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after V PP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
5/15
M27C1024
Table 8B. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C, –40 to 85 °C; –40 to 105 °C or –40 to 125 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
M27C1024
Symbol
Alt
Parameter
Test Condition
-70
-80/-90
-10/-12/
-15/-20
Unit
Min Max Min Max Min Max
tAVQV
tACC
Address Valid to Output Valid
E = VIL, G = VIL
70
80
100
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
70
80
100
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
35
40
50
ns
tEHQZ (2)
tDF
Chip Enable High to Output Hi-Z
G = VIL
0
30
0
30
0
30
ns
tGHQZ (2)
tDF
Output Enable High to Output Hi-Z
E = VIL
0
30
0
30
0
30
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL, G = VIL
0
0
0
ns
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after V PP.
2. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
A0-A15
VALID
tAVQV
VALID
tAXQX
E
tGLQV
tEHQZ
G
tELQV
Q0-Q15
tGHQZ
Hi-Z
AI00705B
6/15
M27C1024
Table 9. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Parameter
Test Condition
Min
0 ≤ VIN ≤ VIH
Max
Unit
±10
µA
50
mA
50
mA
ILI
Input Leakage Current
ICC
Supply Current
IPP
Program Current
VIL
Input Low Voltage
–0.3
0.8
V
V IH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
0.4
V
V OH
Output High Voltage TTL
V ID
A9 Voltage
E = VIL
IOL = 2.1mA
IOH = –400µA
2.4
V
11.5
12.5
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after V PP.
Table 10. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Alt
tAVPL
tAS
Address Valid to Program Low
2
µs
tQVPL
tDS
Input Valid to Program Low
2
µs
tVPHPL
tVPS
VPP High to Program Low
2
µs
tVCHPL
tVCS
VCC High to Program Low
2
µs
tELPL
tCES
Chip Enable Low to Program Low
2
µs
tPLPH
tPW
Program Pulse Width
95
tPHQX
tDH
Program High to Input Transition
2
µs
tQXGL
tOES
Input Transition to Output Enable
Low
2
µs
tGLQV
tOE
Output Enable Low to Output Valid
tDFP
Output Enable High to Output Hi-Z
0
tAH
Output Enable High to Address
Transition
0
tGHQZ
(2)
tGHAX
Parameter
Test Condition
Min
Max
105
Unit
µs
100
ns
130
ns
ns
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after V PP.
2. Sampled only, not 100% tested.
7/15
M27C1024
Figure 6. Programming and Verify Modes AC Waveforms
VALID
A0-A15
tAVPL
Q0-Q15
DATA IN
tQVPL
DATA OUT
tPHQX
VPP
tVPHPL
tGLQV
tGHQZ
VCC
tVCHPL
tGHAX
E
tELPL
P
tPLPH
tQXGL
G
PROGRAM
VERIFY
AI00706
DEVICE OPERATION (cont’d)
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequencycapacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7µF bulk electrolytic capacitor should be used
between Vcc and VSS for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered (and after each ’1’s erasure for UV
EPROM), all bits of the M27C1024 are in the ’1’
state. Data is introduced by selectively programming ’0’s into the desired bit locations. Although
only ’0’s will be programmed,both ’1’s and ’0’s can
8/15
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposure to ultraviolet
light (UV EPROM). The M27C1024 is in the programming mode when VPP input is at 12.75V, E is
at VIL and P is pulsed to VIL. The data to be
programmed is applied to 16 bits in parallel to the
data output pins. The levels required for the address and data inputs are TTL. VCC is specified to
be 6.25V ± 0.25V.
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows programming of the whole array with a guaranteed
margin, in a typical time of 6.5 seconds. Programming with PRESTO II consists of applying a sequenceof 100 µs program pulses toeach word until
a correct verify occurs (see Figure 7). During programming and verify operation, a MARGIN MODE
circuit is automaticallyactivated in order to guarantee that each cell is programmed with enough
margin. No overprogrampulse is applied since the
verify in MARGIN MODE provides necessary margin to each programmed cell.
M27C1024
Figure 7. Programming Flowchart
VCC = 6.25V, VPP = 12.75V
n=0
P = 100µs Pulse
NO
++n
= 25
YES
FAIL
NO
++ Addr
VERIFY
YES
Last
Addr
NO
YES
CHECK ALL WORDS
1st: VCC = 6V
2nd: VCC = 4.2V
AI00707C
Program Inhibit
Programming of multiple M27C1024s in parallel
with different data is also easily accomplished.
Except for E, all like inputs including G of the
parallel M27C1024 may be common. A TTL low
level pulse applied to a M27C1024’s P input, with
E low and VPP at 12.75V, will program that
M27C1024. A high level E input inhibits the other
M27C1024s from being programmed.
Program Verify
A verify (read) should be performed on the programmed bits to determine that they were correctly
programmed. The verify is accomplished with E
and G at VIL, P at VIH, VPP at 12.75V and VCC at
6.25V.
On-Board Programming
The M27C1024 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its correspondingprogramming algorithm. The
ES mode is functional in the 25°C ± 5°C ambient
temperature range that is required when programming the M27C1024. To activate the ES mode, the
programming equipmentmust force 11.5Vto 12.5V
on address line A9 of the M27C1024 with VPP =
VCC = 5V. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All otheraddress lines
must be held at VIL during Electronic Signature
mode. Byte 0 (A0=VIL) represents the manufacturer code and byte 1 (A0=VIH) the device identifier
code. For the STMicroelectronics M27C1024,
these two iden-tifier bytes are given in Table 4 and
can be read-out on outputs Q0 to Q7.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C1024 is
such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It shouldbe notedthat sunlight
and some type of fluorescent lamps have wavelengthsin the 3000-4000Å range. Research shows
that constant exposure to room level fluorescent
lighting could erase a typical M27C1024 in about 3
years, while it would take approximately 1 week to
cause erasure when exposed to direct sunlight. If
the M27C1024 is to be exposed to these types of
lighting conditions for extended periods of time, it
is suggested that opaque labels be put over the
M27C1024 window to prevent unintentional erasure. The recommended erasure procedurefor the
M27C1024 is exposure to short wave ultraviolet
light which has wavelength 2537 Å. The integrated
dose (i.e. UV intensity x exposuretime) for erasure
should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximately 15 to
20 minutes using an ultraviolet lamp with
12000 µW/cm2 power rating. The M27C1024
should be placed within 2.5 cm (1 inch) of the lamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
9/15
M27C1024
ORDERING INFORMATION SCHEME
Example:
Speed
M27C1024 -12 X
VCC Tolerance
C
1
Package
X
F
FDIP40W
1
0 to 70 °C
± 5%
B
PDIP40
6
–40 to 85 °C
55ns
C
PLCC44
7
–40 to 105 °C
-70
70ns
N
3
–40 to 125 °C
-80
80ns
TSOP40
10 x 14mm
-90
90ns
-10
100ns
-12
120ns
-15
150ns
-20
200ns
-10
100ns
35ns
blank
-45
(1)
45ns
X
-55
(1)
Option
Temperature Range
± 10%
-35 (1)
X
TR
Additional
Burn-in
Tape & Reel
Packing
Note: 1. High Speed, see AC Characteristics section for further information.
For a list of available options (Speed, Package, etc...) or for further informationon any aspect of this device,
please contact the STMicroelectronics Sales Office nearest to you.
10/15
M27C1024
FDIP40W - 40 pin Ceramic Frit-seal DIP, with window
mm
Symb
Typ
inches
Min
Max
A
Typ
Min
5.72
Max
0.225
A1
0.51
1.40
0.020
0.055
A2
3.91
4.57
0.154
0.180
A3
3.89
4.50
0.153
0.177
B
0.41
0.56
0.016
0.022
–
–
–
–
B1
1.45
0.057
C
0.23
0.30
0.009
0.012
D
51.79
52.60
2.039
2.071
D2
48.26
–
–
1.900
–
–
E
15.24
–
–
0.600
–
–
13.06
13.36
0.514
0.526
–
–
0.100
–
–
1.900
E1
e
2.54
eA
14.99
–
–
eB
16.18
18.03
L
3.18
S
2.49
–
–
α
4°
11°
N
40
8.13
0.320
0.060
0.098
–
–
4°
11°
40
A2
A3
A1
B1
–
0.710
0.125
1.52
∅
–
0.637
B
A
L
e
α
eA
D2
C
eB
D
S
N
∅
E1
E
1
FDIPW-a
Drawing is not to scale.
11/15
M27C1024
PDIP40 - 40 pin Plastic DIP, 600 mils width
mm
Symb
inches
Typ
Min
Max
Typ
Min
Max
A
4.45
–
–
0.175
–
–
A1
0.64
0.38
–
0.025
0.015
–
A2
3.56
3.91
0.140
0.154
B
0.38
0.53
0.015
0.021
B1
1.14
1.78
0.045
0.070
C
0.20
0.31
0.008
0.012
D
51.78
52.58
2.039
2.070
–
–
–
–
E
14.80
16.26
0.583
0.640
E1
13.46
13.99
0.530
0.551
–
D2
48.26
1.900
e1
2.54
–
–
0.100
–
eA
15.24
–
–
0.600
–
eB
15.24
17.78
0.600
0.700
L
3.05
3.81
0.120
0.150
S
1.52
2.29
0.060
0.090
α
0°
15°
0É
15°
N
40
40
A2
A1
B1
B
A
L
e1
α
eA
D2
C
eB
D
S
N
E1
E
1
PDIP
Drawing is not to scale.
12/15
M27C1024
PLCC44 - 44 lead Plastic Leaded Chip Carrier, square
mm
Symb
Typ
inches
Min
Max
A
4.20
A1
Typ
Min
Max
4.70
0.165
0.185
2.29
3.04
0.090
0.120
B
0.33
0.53
0.013
0.021
B1
0.66
0.81
0.026
0.032
D
17.40
17.65
0.685
0.695
D1
16.51
16.66
0.650
0.656
D2
14.99
16.00
0.590
0.630
E
17.40
17.65
0.685
0.695
E1
16.51
16.66
0.650
0.656
E2
14.99
16.00
0.590
0.630
e
1.27
–
–
0.050
–
–
j
0.89
–
–
0.035
–
–
N
44
CP
44
0.10
0.004
D
D1
A1
A2
1 N
B1
E1 E
Ne
e
D2/E2
F
B
0.51 (.020)
1.14 (.045)
A
Nd
R
CP
PLCC
Drawing is not to scale.
13/15
M27C1024
TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 14mm
mm
Symb
Typ
inches
Min
Max
A
Typ
Min
1.20
0.047
A1
0.05
0.15
0.002
0.006
A2
0.95
1.05
0.037
0.041
B
0.17
0.27
0.007
0.011
C
0.10
0.21
0.004
0.008
D
13.80
14.20
0.543
0.559
D1
12.30
12.50
0.484
0.492
E
9.90
10.10
0.390
0.398
–
–
–
–
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
40
e
0.50
0.020
40
CP
0.10
0.004
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-a
Drawing is not to scale.
14/15
Max
A1
α
L
M27C1024
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1998 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
15/15