MA08509D 10W Power Amplifier Die (8.0-11 GHz) FEATURES • • • • Preliminary Release V DD VDD Broadband Performance 32% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG® MESFET Process RF IN RF OUT VGG Description Maximum Ratings (T The MA08509D is a three stage MMIC power amplifier fabricated using M/A-COM’s mature GaAs Self-Aligned MSAG® MESFET Process. This product is fully matched to 50 ohms on both the input and the output. Rating Symbol Value DC Drain Supply Voltage DC Gate Supply Voltage VDD VGG PIN TJ TSTG 12 -6 500 150 -40 to +85 A = 25 °C unless otherwise noted) RF Input Power Junction Temperature Storage Temperature Unit Vdc Vdc mW °C °C ELECTRICAL CHARACTERISTICS VDD = 10.0 V, VGG = -4 V, PIN = 18 dBm, TA = 25 °C Characteristic Frequency Output Power, saturated Power Gain, saturated Gain Flatness Over Frequency @ Pin = 18 dBm Power Added Efficiency (POUT=PSAT) Return Loss Harmonics Output Stage Thermal Resistance @ Pin = 18 dBm Symbol ƒ PSAT GSAT PAE S11 2ƒο, 3ƒο Rth Min Typ Max Unit 8.0 39.0 20 40 22 +/- 1.0 32 -6 -30 5.4 11.0 41.5 GHz dBm dB dB % dB dBc °C/W 25 -4 Specifications subject to change without notice. North America: Tel. (800)366-2266, Fax (800)618-8883 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information 902179 D 10W Power Amplifier Die (8-11 GHz) MA08509D TYPICAL CHARACTERISTICS (VDD = 10 V, VGG = -4 V, PIN = 18 dBm) 42 32 28 40 24 20 Gain (dB) Pout (dBm) 38 36 16 12 34 8 32 4 30 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 0 11 8 8.25 8.5 8.75 9 Frequency (GHz) 9.25 9.5 9.75 10 10.25 10.5 10.75 11 Frequency (GHz) Figure 1. Output Power vs. Frequency Figure 2. Gain vs. Frequency 0 45 40 -5 35 Return Loss(dB) PAE (%) 30 25 20 -10 -15 15 10 -20 5 0 -25 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11 Frequency (GHz) Figure 3. Power Added Efficiency vs. Frequency 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11 Frequency (GHz) Figure 4. Input Return Loss vs. Frequency Specifications subject to change without notice. North America: Tel. (800)366-2266, Fax (800)618-8883 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information 902179 D 10W Power Amplifier Die (8-11 GHz) MA08509D 0.1 µF 5000 pF APPLICATION INFORMATION RF IN VDD 5000 pF VDD 0.1 µF 5000 pF 0.1 µF VGG 100 pF 50 Ω 50 Ω RF OUT Assembly: Chip dimensions: 4.6 mm x 4.6 mm, .003” thickness. Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. 100 pF Biasing: VDD 5000 pF VDD 0.1 µF 5000 pF 0.1 µF 5000 pF 0.1 µF VGG 1. User must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Figure 5. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing Specifications subject to change without notice. North America: Tel. (800)366-2266, Fax (800)618-8883 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information 902179 D