MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG400V1US51A FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. (Short-Circuit and Over-Current) ¡UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION General purpose inverters, servo drives and motor controls OUTLINE DRAWING & EQUIVALENT CIRCUIT Dimensions in mm 4-φ6.5±0.3 118±0.8 C C E E 104±0.6 G JAPAN 54±0.6 3.5±0.5 8.5±0.6 +2.3 -1 +2 10±0.6 Equivalent Circuit 22.5 -1 44±0.6 3-M4 E 68±0.8 11±0.6 11±0.6 E 20 +2 C G E 26±0.6 25.5 -1 4-M6 E 47±0.6 C SEN SEN 116±0.8 66±0.8 Weight: 420g Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25°C) Symbol VCES VGES VSES IC ICP IF IFM PC Tj Tstg Vlsol — — Parameter Collector-emitter voltage Gate-emitter voltage Sense-emitter voltage Collector DC current 1ms Forward DC current 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw Terminal (M4/M6) torque Mounting Conditions Ratings 1700 ±20 40 400 800 400 800 2750 150 –40 ~ 125 4000 (AC 1 minute) 2/3 3 TC = 25°C Unit V V V A A W °C °C V N•m ELECTRICAL CHARACTERISTICS (Ta = 25°C) Symbol Parameter IGES ICES VGE(off) VCE(sat) Cies td(on) tr ton td(off) tf toff VF trr ISES IC(SEN-START) VSEN Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching Turn-on time Turn-off delay time time Fall time Turn-off time Forward voltage Reverse recovery time Sense leakage current Sense Sense start current Sense voltage Rth(j-c) Thermal resistance Test conditions VGE = ±20V, VCE = 0 VCE = 1700V, VGE = 0 IC = 400mA, VCE = 5V IC = 400A, Tj = 25°C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 900V IC = 400A VGE = ±15V RG = 2Ω IF = 400A, VGE = 0 IF = 400A, VGE = –15V, di/dt = 1500A/µs VSEN – E = 40V, VCE = 0, VGE = 0 VGE = 15V, VSE = 14.8V VGE = 15V, IC = 2400A Transistor stage Diode stage (Note 1) (Note 1) (Note 2) (Note 2) Min. — — 4.0 — — — — — — — — — — — 1050 — — — Limits Typ. — — — 3.2 51200 0.14 0.07 0.21 0.49 0.28 0.77 4.0 0.3 — — — — — Max. ±500 4.0 8.0 4.5 — — — — — 1.0 — 5.5 0.6 200 — 13.2 0.045 0.125 Unit nA mA V V pF µs V µs nA A V °C/W Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Note 1: Switching time and reverse recovery time test circuit and timing chart Switching time test circuit Timing chart 90% VGE 10% RG IF –VGE VCC 90% Irr Irr L IC 20% Irr IC 90% trr RG 10% 10% td(on) td(off) tf Note 2: Sense start current and sense voltage test circuit Test circuit Timing chart *Measurement in the complete charge period. Complete charge period VGE IC Inductance 2400A IC(SEN-START) 15V 330Ω VSE IC VSE 14.8V 15V VSEN Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS <VCE(sat) Rank> <VF Rank> VCE(sat) VF Rank symbol MIN. MAX. Rank symbol MIN. MAX. 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 A B C D E 4.5 4.0 3.5 3.0 2.5 5.5 4.7 4.2 3.7 3.2 <Mark position> VCE(sat), VF Rank C 000001 E E G E 34C C SEN JAPAN Serial No. MG400V1US51 T52AA1 Lot No. Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES IC - VCE 400 9 200 VGE = 8V Common emitter Tj = 25°C 0 2 4 6 8 COLLECTOR CURRENT IC (A) 10 20 12 10 15 600 9 400 VGE = 8V 200 Common emitter Tj = 125°C 0 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE VCE - VGE 16 12 8 IC = 800A 4 400 200 Common emitter Tj = 25°C 0 0 800 4 8 12 16 20 12 8 IC = 800A 400 4 200 Common emitter Tj = 125°C 0 0 4 8 12 16 GATE-EMITTER VOLTAGE VGE (V) IC - VGE IF - VF Common emitter VCE = 5V 320 160 8 12 25 Tj = 125°C 480 4 20 800 25 Tj = 125°C 0 16 GATE-EMITTER VOLTAGE VGE (V) 640 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 12 20 600 0 COLLECTOR CURRENT IC (A) 800 15 16 GATE-EMITTER VOLTAGE VGE (V) 20 FORWARD CURRENT IF (A) COLLECTOR CURRENT IC (A) 800 IC - VCE 600 400 200 Common cathode VGE = 0V 0 0 2 4 6 8 10 FORWARD VOLTAGE VF (V) Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS SW time - IC SW time - RG 104 103 toff 103 7 5 3 ton 2 td(on) td(off) tr 102 7 5 3 2 Common emitter VCC = 900V IC = 400A VGE = ±15V Tj = 25°C Tj = 125°C 101 7 5 3 2 100 0 4 tf 8 12 td(off) 102 ton td(on) 7 5 3 2 tr Common emitter VCC = 900V RG = 2Ω VGE = ±15V Tj = 25°C Tj = 125°C 101 7 5 100 16 0 100 200 300 COLLECTOR CURRENT IC (A) SW loss - RG SW loss - IC 400 102 SWITCHING LOSS Eon, Eoff (mJ) Eon 102 7 5 3 2 Eoff Common emitter VCC = 900V IC = 400A VGE = ±15V Tj = 25°C Tj = 125°C 101 7 5 3 2 0 4 8 12 Eon 101 7 5 Common emitter VCC = 900V RG = 2Ω VGE = ±15V Tj = 25°C Tj = 125°C 3 2 0 100 200 300 Irr, trr - RG Irr, trr - IF 3 2 102 trr Common emitter VCC = 900V IC = 400A VGE = ±15V Tj = 25°C Tj = 125°C 3 2 0 2 COLLECTOR CURRENT IC (A) Irr 7 5 3 GATE RESISTANCE RG (Ω) 103 7 5 Eoff 7 5 100 16 4 8 12 GATE RESISTANCE RG (Ω) 16 PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) SWITCHING LOSS Eon, Eoff (mJ) PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 3 2 GATE RESISTANCE RG (Ω) 7 5 3 2 101 tf 3 2 103 100 toff 7 5 SWITCHING TIME (ns) SWITCHING TIME (ns) 7 5 3 2 400 103 7 5 Irr 3 2 102 trr 7 5 3 2 101 0 100 Common emitter VCC = 900V RG = 2Ω VGE = ±15V Tj = 25°C Tj = 125°C 200 300 400 FORWARD CURRENT IF (A) Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Edsw - IF Edsw - RG REVERSE RECOVERY LOSS Edsw (mJ) 7 5 3 2 101 7 5 Common emitter VCC = 900V IC = 400A VGE = ±15V Tj = 25°C Tj = 125°C 3 2 0 4 8 12 16 3 2 101 7 5 Common emitter VCC = 900V RG = 2Ω VGE = ±15V Tj = 25°C Tj = 125°C 3 2 100 0 100 200 300 400 VCE, VGE - QG C - VCE 105 20 800 16 VCE =0V 600 12 900 400 300 200 0 7 5 FORWARD CURRENT IF (A) 1000 0 102 GATE RESISTANCE RG (Ω) 500 1000 8 600 Common emitter 4 RL = 2.25Ω Tj = 25°C 0 1500 2000 2500 CHARGE QG (nC) 7 5 CAPACITANCE C (pF) 100 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) REVERSE RECOVERY LOSS Edsw (mJ) 102 Cies 3 2 104 7 5 Coes 3 2 103 7 5 3 2 Cres VGE = 0V f = 1MHz TC = 25°C 102 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Rth - tW TRANSIENT THERMAL RESISTANCE Rth(j-c) (°C/W) 100 7 TC = 25°C 5 3 2 DIODE STAGE 10-1 7 5 3 2 10-2 TRANSISTOR STAGE 7 5 3 2 10-3 -3 10 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 PULSE WIDTH tW (s) Dec.2005