MJ802 High−Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. http://onsemi.com Features • • • • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A Excellent Safe Operating Area Complement to the PNP MJ4502 Pb−Free Package is Available* 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS − 200 WATTS MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCER 100 Vdc Collector−Base Voltage VCB 100 Vdc Collector−Emitter Voltage VCEO 90 Vdc Emitter−Base Voltage VEB 4.0 Vdc Collector Current IC 30 Adc Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 200 1.14 W W/_C TJ, Tstg −65 to +200 _C Operating and Storage Junction Temperature Range TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 0.875 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MJ802G AYYWW MEX MJ802 G A YY WW MEX = Device Code = Pb−Free Package = Assembly Location = Year = Work Week = Country of Origin ORDERING INFORMATION Device MJ802 MJ802G Package Shipping TO−204 100 Units / Tray TO−204 (Pb−Free) 100 Units / Tray *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 10 1 Publication Order Number: MJ802/D MJ802 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit BVCER 100 − Vdc VCEO(sus) 90 − Vdc − − 1.0 5.0 OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 200 mAdc, RBE = 100 W) Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc) Collector−Base Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TC = 150_C) ICBO mAdc Emitter−Base Cutoff Current (VBE = 4.0 Vdc, IC = 0) IEBO − 1.0 mAdc DC Current Gain (Note 1) (IC = 7.5 Adc, VCE = 2.0 Vdc) hFE 25 100 − Base−Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc) VBE(on) − 1.3 Vdc Collector−Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc) VCE(sat) − 0.8 Vdc Base−Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc) VBE(sat) − 1.3 Vdc fT 2.0 − MHz ON CHARACTERISTICS(1) DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. PD, POWER DISSIPATION (WATTS) 200 150 100 50 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) 160 180 Figure 1. Power−Temperature Derating Curve http://onsemi.com 2 200 MJ802 2.0 2.0 TJ = 175° C 25°C 1.0 0.7 0.5 0.3 0.2 1.0 0.2 0.3 0.5 2.0 3.0 5.0 0.5 0.2 0.1 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 0 0.03 0.05 20 30 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain Figure 3. ‘‘On” Voltages 1.0 ms dc TJ = 200° C 5.0ms SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATIONS TC = 25°C PULSE DUTY CYCLE ≤ 10% 5.0 10 20 30 2.0 3.0 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 20 30 The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power temperature derating must be observed for both steady state and pulse power conditions. 100 ms 5.0 1.0 1.0 0.2 10 20 2.0 1.2 IC, COLLECTOR CURRENT (AMP) 100 50 10 1.4 0.4 DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF ICBO. 0.1 TJ = 25°C 1.6 VCE = 2.0 V − 55°C 0.1 0.03 0.05 IC, COLLECTOR CURRENT (AMP) 1.8 ON" VOLTAGE (VOLTS) hFE, NORMALIZED CURRENT GAIN 3.0 100 Figure 4. Active Region Safe Operating Area http://onsemi.com 3 MJ802 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C −T− E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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