2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb−Free Package is Available ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Emitter Voltage VCER 70 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 7 Vdc IC 15 Adc Collector Current − Continuous Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C TJ, Tstg – 65 to + 200 °C Symbol Max Unit RJC 1.52 °C/W Operating and Storage Junction Temperature Range 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W MARKING DIAGRAM TO−204AA (TO−3) CASE 1−07 xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location YY = Year WW = Work Week x = 1, 2, or 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Package Shipping† 2N3055 TO−204AA 100 Units / Tray 2N3055G TO−204AA (Pb−Free) 1 Units / Tubes 140 2N3055H TO−204AA 100 Units / Tray 120 MJ2955 TO−204AA 100 Units / Tray Device 160 PD, POWER DISSIPATION (WATTS) xxxx55 A YYWW 100 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 80 60 40 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 20 0 0 25 50 75 100 125 150 175 200 Preferred devices are recommended choices for future use and best overall value. TC, CASE TEMPERATURE (°C) Figure 1. Power Derating Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 − Vdc *OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 ) VCER(sus) 70 − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO − 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) ICEX − − 1.0 5.0 Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO − 5.0 20 5.0 70 − − 1.1 3.0 mAdc mAdc *ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) − VCE(sat) Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.5 Vdc Is/b 2.87 − Adc Current Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 − MHz *Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120 − *Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) fhfe 10 − kHz SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1.0 s, Nonrepetitive) DYNAMIC CHARACTERISTICS *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. IC, COLLECTOR CURRENT (AMP) 50 s dc 10 1 ms 6 4 500 s 2 250 s 1 0.6 0.4 0.2 BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 6 10 20 40 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 60 Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300 TJ = 150°C 25°C 100 −55 °C 70 50 30 20 10 7.0 5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.1 −55 °C 70 50 30 20 10 10 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 25°C 1.6 8.0 A 1.2 0.8 0.4 0 5.0 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5.0 7.0 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 Figure 4. DC Current Gain, MJ2955 (PNP) 2.0 4.0 A 0.2 0.1 Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = 150°C 25°C 100 hFE , DC CURRENT GAIN 200 hFE , DC CURRENT GAIN VCE = 4.0 V 5000 2.0 TJ = 25°C 1.6 IC = 1.0 A 4.0 A 8.0 A 1.2 0.8 0.4 0 5.0 Figure 5. Collector Saturation Region, 2N3055 (NPN) 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5000 Figure 6. Collector Saturation Region, MJ2955 (PNP) 1.4 2.0 TJ = 25°C 1.2 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 4.0 V 0.4 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V 0.8 0.4 0.2 0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0 10 0.1 IC, COLLECTOR CURRENT (AMPERES) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 7. “On” Voltages, 2N3055 (NPN) Figure 8. “On” Voltages, MJ2955 (PNP) http://onsemi.com 3 10 2N3055, MJ2955 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C −T− E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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