MM8006 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-72 The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCBO 15 V PDISS 600 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C CHARACTERISTICS 2 = BASE 3 = COLLECTOR 4 = CASE NONE TC = 25 °C SYMBOL BVCEO 1 = EMITTER TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V IC = 3.0 mA 10 BVCBO IC = 1.0 µA 15 ICBO VCB = 15 V VCB = 15 V BVEBO IE = 10 µA hFE VCE = 1.0 V IC = 1.0 mA VCE(SAT) IC = 10 mA IB = 1.0 mA 0.4 V VBE(SAT) IC = 10 mA IB = 1.0 mA 1.0 V ft VCE = 10 V IC = 4.0 mA Cob VCB = 0 V VCB = 10 V f = 140 KHz f = 140 KHz 3.0 1.7 pF Cib VEB = 0.5 V f = 140 KHz 2.0 pF NF VCE = 6.0 V IC = 1.0 mA f = 60 MHz 6.0 dB Gpe VCB = 12 V IC = 6.0 mA f = 200 MHz 15 dB Pout η VCB = 15 V IC = 8.0 mA f = 500 MHz 30 25 mW % TA = 150 °C f = 100 MHz V 0.01 1.0 µA 3.0 V 25 --- MHz 1000 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1