ONSEMI MMBFJ175LT1G_09

MMBFJ175LT1G
JFET Chopper
P−Channel − Depletion
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
http://onsemi.com
Compliant
2 SOURCE
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
Symbol
Value
Unit
VDG
25
V
VGS(r)
−25
V
Symbol
Max
Unit
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
3
GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
3
SOT−23 (TO−236)
CASE 318
STYLE 10
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
MARKING DIAGRAM
6W M G
G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
1
Symbol
Min
Max
Unit
V(BR)GSS
30
−
V
Gate Reverse Current
(VDS = 0 V, VGS = 20 V)
IGSS
−
1.0
nA
Gate −Source Cutoff Voltage
(VDS = 15, ID = 10 nA)
VGS(OFF)
3.0
6.0
V
Zero Gate−Voltage Drain Current (Note 2)
(VGS = 0, VDS = 15 V)
IDSS
7.0
60
mA
Drain Cutoff Current
(VDS = 15 V, VGS = 10 V)
ID(off)
−
1.0
nA
MMBFJ175LT1G
Drain Source On Resistance
(ID = 500 mA)
rDS(on)
−
125
W
Ciss
−
11
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Crss
−
5.5
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(VDS = 0, ID = 1.0 mA)
ON CHARACTERISTICS
Input Capacitance
Reverse Transfer
Capacitance
VDS = 0, VGS = 10V
f = 1.0 MHz
6W = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
SOT−23
(Pb−Free)
3000 / Tape & Reel
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1
Publication Order Number:
MMBFJ175LT1/D
MMBFJ175LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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2
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MMBFJ175LT1/D