ONSEMI MMPQ2369

MMPQ2369
Quad Switching
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
15
Vdc
Collector −Base Voltage
VCB
40
Vdc
Emitter −Base Voltage
VEB
4.5
Vdc
IC
500
mAdc
Collector Current —
Continuous
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage
Junction Temperature
Range
TJ, Tstg
Each
Transistor
Four
Transistors
Equal
Power
0.4
3.2
0.72
6.4
16
1
CASE 751B−05, STYLE 4
SO−16
W
0.66
5.3
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1.92
15.4
1
16
2
15
mW/°C
3
14
4
13
W
5
12
mW/°C
−55 to +150
6
11
7
10
8
9
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
15
—
—
40
—
—
4.5
—
—
—
—
0.4
Unit
OFF CHARACTERISTICS
Collector −Emitter
Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base
Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base
Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
Vdc
Vdc
Vdc
mAdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MMPQ2369/D
MMPQ2369
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Typ
Max
40
20
—
—
—
—
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
hFE
—
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
—
—
0.25
Vdc
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
—
—
0.9
Vdc
fT
450
550
—
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
2.5
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
3.0
5.0
pF
Turn−On Time
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc)
ton
—
9.0
—
ns
Turn−Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
—
15
—
ns
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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2
MMPQ2369
INFORMATION FOR USING THE SO−16 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
inches
mm
0.050
1.270
SO−16
SO−16 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SO−16 is a function of the
pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction
to ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SO−16 package,
PD can be calculated as follows:
PD =
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during cooling.
TJ(max) − TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 1.0 watt.
PD =
150°C − 25°C
125°C/W
= 1.0 watt
The 125°C/W for the SO−16 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.0 watt. There are
other alternatives to achieving higher power dissipation
from the SO−16 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad™. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can
be doubled using the same footprint.
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage
to the device.
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3
MMPQ2369
PACKAGE DIMENSIONS
CASE 751B−05
SO−16
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
16
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
K
C
−T−
R
F
X 45 _
SEATING
PLANE
D
16 PL
0.25 (0.010)
M
T B
S
A
S
M
J
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
COLLECTOR, DYE #1
COLLECTOR, #1
COLLECTOR, #2
COLLECTOR, #2
COLLECTOR, #3
COLLECTOR, #3
COLLECTOR, #4
COLLECTOR, #4
BASE, #4
EMITTER, #4
BASE, #3
EMITTER, #3
BASE, #2
EMITTER, #2
BASE, #1
EMITTER, #1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMPQ2369/D