IRF MOSFETIRF6602

PD - 94363A
IRF6602
DirectFETTM Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
VDSS
RDS(on) max
ID
13mΩ@VGS = 10V
11A
19mΩ@VGS = 4.5V
8.8A
20V
Techniques
DirectFET™ ISOMETRIC
Description
The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
11
8.8
88
2.3
1.5
18
± 20
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
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Parameter
Typ.
Max.
Units
Junction-to-Ambientƒ
Junction-to-Ambient„
Junction-to-Ambient…
Junction-to-Case†
Junction-to-PCB mounted
–––
12.5
20
3.0
1.0
55
–––
–––
–––
–––
°C/W
1
04/24/02
IRF6602
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
20
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.022
10
14
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
13
VGS = 10V, ID = 11A ƒ
mΩ
19
VGS = 4.5V, ID = 8.8A ƒ
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
125
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 20V
nA
-200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Q sw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge Cont FET
Total Gate Charge Sync FET
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate to Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
13
11
3.5
1.3
4.8
6.1
19
11
58
15
5.5
1420
960
100
Max. Units
Conditions
–––
S
VDS = 10V, ID = 8.8A
20
VGS = 5.0V, VDS = 10V, ID = 8.8A
–––
VGS = 5.0V, VDS < 100mV
–––
VDS = 16V, ID = 8.8A
–––
nC
–––
–––
–––
VDS = 16V, VGS = 0V
–––
VDD = 15V
–––
ID = 8.8A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
97
8.8
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Q rr
trr
Q rr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
11
–––
–––
88
––– 0.83
––– 0.65
––– 42
––– 51
––– 43
––– 55
1.2
–––
62
77
64
82
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 8.8A, VGS = 0V ƒ
TJ = 125°C, IS = 8.8A, VGS = 0V ƒ
TJ = 25°C, IF = 8.8A, VR=15V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 8.8A, VR=15V
di/dt = 100A/µs ƒ
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IRF6602
1000
1000
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
2.7V
100
2.7V
10
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
100.00
2.0
T J = 150°C
I D = 11A
T J = 25°C
10.00
VDS = 15V
20µs PULSE WIDTH
1.00
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
(Normalized)
1.5
R DS(on) , Drain-to-Source On Resistance
ID , Drain-to-Source Current (Α )
10
VDS, Drain-to-Source Voltage (V)
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF6602
100000
6
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
Ciss
Coss
1000
Crss
100
VDS = 16V
5
Coss = Cds + Cgd
10000
ID = 8.8A
4
2
1
10
1
10
0
100
0
4
16
1000
ID, Drain-to-Source Current (A)
100
TJ = 150 ° C
I SD, Reverse Drain Current (A)
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
T J= 25 ° C
1
V GS = 0 V
0.1
0.2
0.4
0.6
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
10
0.8
1.0
1.2
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.4
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6602
12
RD
VDS
VGS
9
D.U.T.
RG
+
I D , Drain Current (A)
-VDD
4.5V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
P DM
0.02
1
t1
0.01
t2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
1. Duty factor D =
2. Peak T
0.01
0.1
t1/ t
2
J = P DM x Z thJA
1
+T A
10
100
t 1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
R DS(on) , Drain-to -Source On Resistance (m Ω )
R DS (on) , Drain-to-Source On Resistance (m Ω)
IRF6602
20
15
VGS = 4.5V
VGS = 10V
10
5
0
20
40
60
80
1150
950
750
550
350
150
ID = 11A
-50
2.0
100
4.0
6.0
8.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
12V
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
250
VG
3mA
7.0A
Charge
200
IG
BOTTOM
ID
E AS , Single Pulse Avalanche Energy (mJ)
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
IAS
tp
DRIVE R
+
V
- DD
0.01 Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
ID
3.9A
TOP
VGS
A
8.8A
150
100
50
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
( ° C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF6602
DirectFET™ Outline Dimension
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7
IRF6602
DirectFET™ PCB Footprint
DirectFET™ Tape and Reel Dimension
8
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IRF6602
DirectFET™ Part Marking
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Used double sided cooling, mounting pad.
… Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
† TC measured with thermal couple mounted to top (Drain) of part.
‚ Starting TJ = 25°C, L = 2.5mH, RG = 25Ω, IAS = 8.8A. (See Figure 14)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
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