FREESCALE MRFG35003N6AT1

Freescale Semiconductor
Technical Data
Document Number: MRFG35003N6A
Rev. 2, 6/2009
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
MRFG35003N6AT1
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ =
180 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 42.5 dBc in 3.84 MHz Channel Bandwidth
• 3 Watts P1dB @ 3550 MHz, CW
Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
8
Vdc
Gate- Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
24
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Channel Temperature (1)
Tch
175
°C
Symbol
Value (2)
Unit
RθJC
5.9
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak
Temperature
Unit
3
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35003N6AT1
1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
2.9
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
<1
100
μAdc
Off State Drain Current
(VDS = 6 Vdc, VGS = - 2.2 Vdc)
IDSO
—
50
1000
μAdc
Off State Current
(VDS = 20 Vdc, VGS = - 2.5 Vdc)
IDSX
—
<1
15
mAdc
Gate- Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
- 1.2
- 0.95
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 6 Vdc, ID = 180 mA)
VGS(Q)
- 1.1
- 0.82
- 0.6
Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mWatts Avg., f = 3550 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
8
10
—
dB
Drain Efficiency
hD
22
27
—
%
ACPR
—
- 42.5
- 38
dBc
—
W
Adjacent Channel Power Ratio
Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
3
MRFG35003N6AT1
2
RF Device Data
Freescale Semiconductor
VBIAS
VSUPPLY
C11
C10
C9
C8
C15
C7
C16
C6
C17
C5
C18
C4
C19
Z9
C14
C13
C12
Z12
R1
RF
INPUT
Z1
Z2
Z3
Z4
Z6
Z5
Z7
RF
OUTPUT
Z8
Z10
Z11
Z13
Z14
Z15
Z16
C3
C1
C20
C2
Z1
Z2, Z4
Z3
Z5
Z6
Z7
Z8, Z10
Z9
Z17
C22
0.045″ x 0.753″ Microstrip
0.045″ x 0.025″ Microstrip
0.020″ x 0.360″ Microstrip
0.045″ x 0.075″ Microstrip
0.045″ x 0.055″ Microstrip
0.300″ x 0.125″ Microstrip
0.146″ x 0.070″ Microstrip
0.025″ x 0.485″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
C21
0.300″ x 0.215″ Microstrip
0.025″ x 0.497″ Microstrip
0.025″ x 0.322″ Microstrip
0.025″ x 0.270″ Microstrip
0.025″ x 0.083″ Microstrip
0.045″ x 0.050″ Microstrip
0.045″ x 0.467″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 1. MRFG35003N6A Test Circuit Schematic
Table 6. MRFG35003N6A Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
0.5 pF Chip Capacitor
08051J0R5BBS
AVX
C2
0.4 pF Chip Capacitor
06035J0R4BBS
AVX
C3
0.5 pF Chip Capacitor
06035J0R5BBS
AVX
C4, C19, C20
6.8 pF Chip Capacitors
08051J6R8BBS
AVX
C5, C18
10 pF Chip Capacitors
ATC100A100JT150XT
ATC
C6, C17
100 pF Chip Capacitors
ATC100A101JT150XT
ATC
C7, C16
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C8, C15
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C9, C14
0.01 μF Chip Capacitors
ATC200B103KT50XT
ATC
C10, C13
39K pF Chip Capacitors
ATC200B393KT50XT
ATC
C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C21, C22
0.7 pF Chip Capacitors
08051J0R7BBS
AVX
R1
50 Ω Chip Resistor
CRCW040250R0FKTA
Vishay
MRFG35003N6AT1
RF Device Data
Freescale Semiconductor
3
C10 C9
C14 C13
C12
C11
C8
C15
C7
C6
C5
C16
C17
C18
C4
C19
C3
C1
C2
R1
C20
C22
C21
MRFG350xxxx
Rev. 6
Figure 2. MRFG35003N6A Test Circuit Component Layout
MRFG35003N6AT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
60
VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
10
50
40
Gps
8
30
20
6
ηD
4
10
2
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
12
0
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
0
−5
VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
−10
−10
−15
−20
IRL
−30
−20
−40
−25
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 3. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR
−50
−30
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 4. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
14
32
30
10
Gps
8
28
26
6
ηD
4
24
2
3450
3500
3550
3600
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
12
34
VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
22
3650
f, FREQUENCY (MHz)
Figure 5. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Frequency
NOTE: Data is generated from the test circuit shown.
MRFG35003N6AT1
RF Device Data
Freescale Semiconductor
5
0
0
VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
−10
−5
−20
−10
IRL
−30
−15
−40
−20
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
ACPR
−50
3450
3500
3550
−25
3650
3600
f, FREQUENCY (MHz)
Figure 6. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Frequency
60
VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz
Single−Carrier OFDM 802.16d, 64 QAM 3/4
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
−10
50
−15
40
−20
30
20
−25
ηD
−30
10
ηD, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (dB)
−5
EVM
−35
0
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 7. Single - Channel OFDM Error Vector
Magnitude and Drain Efficiency versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35003N6AT1
6
RF Device Data
Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 6 Vdc, IDQ = 180 mA, TA = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
500
0.952
- 178.5
3.658
83.3
0.017
4.87
0.844
177.9
550
0.952
- 179.7
3.336
82.0
0.017
4.61
0.845
177.3
600
0.952
179.2
3.062
80.7
0.017
4.46
0.845
176.8
650
0.952
178.2
2.832
79.4
0.018
4.25
0.845
176.2
700
0.952
177.2
2.627
78.2
0.018
4.15
0.845
175.7
750
0.952
176.3
2.451
77.0
0.018
4.03
0.844
175.1
800
0.952
175.4
2.304
75.8
0.018
3.89
0.844
174.6
850
0.952
174.6
2.175
74.7
0.018
3.79
0.845
174.1
900
0.952
173.9
2.062
73.5
0.018
3.72
0.845
173.6
950
0.952
173.1
1.955
72.4
0.018
3.66
0.845
173.1
1000
0.952
172.3
1.857
71.3
0.018
3.53
0.845
172.6
1050
0.951
171.6
1.769
70.1
0.018
3.39
0.845
172.1
1100
0.951
170.9
1.696
69.0
0.018
3.25
0.845
171.6
1150
0.952
170.3
1.631
68.0
0.018
3.11
0.845
171.1
1200
0.951
169.6
1.567
66.8
0.018
2.90
0.845
170.6
1250
0.951
168.9
1.508
65.8
0.018
2.78
0.845
170.0
1300
0.951
168.3
1.453
64.7
0.018
2.76
0.844
169.5
1350
0.951
167.7
1.403
63.6
0.018
2.70
0.844
168.9
1400
0.951
167.1
1.360
62.5
0.019
2.56
0.843
168.4
1450
0.950
166.5
1.319
61.4
0.019
2.46
0.843
167.8
1500
0.950
166.0
1.308
60.0
0.019
2.11
0.839
166.5
1550
0.950
165.7
1.267
59.0
0.019
2.15
0.839
165.8
1600
0.950
165.3
1.226
58.0
0.019
2.11
0.840
165.2
1650
0.950
164.9
1.189
57.0
0.019
2.13
0.840
164.5
1700
0.950
164.4
1.154
56.0
0.019
2.02
0.841
164.0
1750
0.950
164.0
1.123
54.9
0.019
1.89
0.841
163.5
1800
0.949
163.4
1.093
53.9
0.019
1.83
0.842
163.0
1850
0.949
162.9
1.065
52.9
0.020
1.75
0.842
162.6
1900
0.949
162.3
1.039
51.9
0.020
1.58
0.842
162.1
1950
0.948
161.7
1.014
50.9
0.020
1.45
0.841
161.7
2000
0.948
161.1
0.991
49.9
0.020
1.27
0.841
161.3
2050
0.948
160.5
0.970
48.8
0.020
1.15
0.842
160.9
2100
0.948
159.8
0.950
47.8
0.020
0.98
0.841
160.5
2150
0.947
159.2
0.931
46.8
0.020
0.83
0.841
160.1
2200
0.947
158.5
0.914
45.8
0.020
0.64
0.841
159.8
2250
0.947
157.7
0.897
44.7
0.020
0.39
0.841
159.4
2300
0.947
156.9
0.883
43.6
0.021
0.13
0.839
159.1
2350
0.946
156.1
0.869
42.6
0.021
- 0.13
0.839
158.8
2400
0.946
155.3
0.857
41.5
0.021
- 0.44
0.838
158.4
2450
0.945
154.4
0.845
40.4
0.021
- 0.82
0.838
158.1
2500
0.945
153.5
0.835
39.2
0.021
- 1.20
0.836
157.8
2550
0.944
152.6
0.825
38.1
0.022
- 1.58
0.835
157.4
2600
0.944
151.7
0.816
37.0
0.022
- 1.95
0.833
157.0
2650
0.944
150.9
0.808
35.9
0.022
- 2.32
0.832
156.5
2700
0.943
150.0
0.800
34.7
0.022
- 2.71
0.831
156.1
2750
0.942
149.0
0.793
33.5
0.023
- 3.10
0.830
155.6
(continued)
MRFG35003N6AT1
RF Device Data
Freescale Semiconductor
7
Table 7. Common Source S - Parameters (VDD = 6 Vdc, IDQ = 180 mA, TA = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2800
0.942
148.1
0.787
32.3
0.023
- 3.45
0.828
155.1
2850
0.941
147.2
0.780
31.1
0.023
- 3.81
0.826
154.6
2900
0.941
146.3
0.775
29.9
0.023
- 4.24
0.824
154.0
2950
0.940
145.4
0.770
28.6
0.024
- 4.68
0.822
153.3
3000
0.940
144.6
0.766
27.4
0.024
- 5.11
0.821
152.6
3050
0.939
143.8
0.761
26.2
0.024
- 5.52
0.819
151.8
3100
0.938
143.0
0.757
25.0
0.025
- 5.90
0.818
151.0
3150
0.938
142.3
0.752
23.7
0.025
- 6.24
0.816
150.1
3200
0.937
141.7
0.748
22.5
0.025
- 6.70
0.814
149.2
3250
0.937
141.1
0.745
21.3
0.026
- 7.22
0.813
148.2
3300
0.937
140.5
0.740
20.1
0.026
- 7.78
0.813
147.3
3350
0.936
139.9
0.736
18.9
0.027
- 8.32
0.811
146.3
3400
0.935
139.3
0.732
17.7
0.027
- 8.86
0.810
145.4
3450
0.934
138.8
0.728
16.5
0.027
- 9.47
0.809
144.5
3500
0.934
138.2
0.723
15.3
0.028
- 10.00
0.808
143.6
3550
0.933
137.6
0.720
14.1
0.028
- 10.60
0.807
142.7
3600
0.932
137.0
0.716
13.0
0.028
- 11.16
0.807
141.9
3650
0.932
136.4
0.712
11.8
0.028
- 11.65
0.807
141.1
3700
0.930
135.8
0.708
10.7
0.029
- 12.05
0.807
140.3
3750
0.929
135.1
0.704
9.6
0.029
- 12.48
0.806
139.6
3800
0.928
134.5
0.700
8.5
0.029
- 12.78
0.806
138.9
3850
0.928
133.9
0.696
7.4
0.029
- 13.03
0.805
138.3
3900
0.927
133.2
0.693
6.3
0.030
- 13.30
0.804
137.6
3950
0.926
132.6
0.690
5.2
0.030
- 13.55
0.804
137.0
4000
0.926
131.8
0.687
4.1
0.030
- 13.84
0.802
136.4
4050
0.925
131.1
0.684
3.1
0.030
- 14.13
0.801
135.8
4100
0.924
130.4
0.681
1.9
0.031
- 14.34
0.799
135.1
4150
0.923
129.7
0.679
0.8
0.031
- 14.45
0.798
134.5
4200
0.921
128.9
0.677
- 0.2
0.031
- 14.48
0.797
134.0
4250
0.920
128.1
0.676
- 1.4
0.032
- 14.65
0.797
133.4
4300
0.917
127.2
0.675
- 2.5
0.032
- 14.76
0.796
132.9
4350
0.917
126.3
0.674
- 3.7
0.033
- 15.08
0.795
132.3
4400
0.916
125.4
0.673
- 4.9
0.034
- 15.50
0.792
131.8
4450
0.915
124.3
0.673
- 6.1
0.034
- 15.93
0.791
131.3
4500
0.913
123.2
0.673
- 7.4
0.035
- 16.40
0.788
130.8
4550
0.912
122.0
0.673
- 8.7
0.035
- 16.94
0.786
130.2
4600
0.910
120.7
0.674
- 10.0
0.036
- 17.54
0.783
129.7
4650
0.909
119.4
0.675
- 11.4
0.037
- 18.24
0.780
129.1
4700
0.908
118.0
0.676
- 12.8
0.038
- 18.93
0.777
128.6
4750
0.907
116.5
0.679
- 14.3
0.038
- 19.78
0.773
127.9
4800
0.905
115.0
0.681
- 15.9
0.039
- 20.65
0.771
127.2
4850
0.903
113.4
0.684
- 17.4
0.040
- 21.58
0.768
126.4
4900
0.901
111.8
0.686
- 19.1
0.041
- 22.66
0.765
125.6
4950
0.900
110.2
0.689
- 20.7
0.042
- 23.74
0.762
124.6
5000
0.898
108.6
0.692
- 22.4
0.042
- 24.86
0.757
123.6
MRFG35003N6AT1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
0.35 (0.89) X 45_" 5 _
N
K
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉÉÉÉÉ
C
4
1
2
3
S
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
G
inches
10_DRAFT
Q
ZONE W
0.115
2.92
L
0.020
0.51
4
ZONE V
R
0.115
2.92
CASE 466 - 03
ISSUE D
PLD - 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRFG35003N6AT1
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2007
• Initial Release of Data Sheet
1
Nov. 2008
• Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1
2
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
MRFG35003N6AT1
10
RF Device Data
Freescale Semiconductor
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MRFG35003N6AT1
Document
RF
DeviceNumber:
Data MRFG35003N6A
Rev. 2, 6/2009
Freescale
Semiconductor
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