MRW53601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE HLP-1 DESCRIPTION: The MRW53601 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. MAXIMUM RATINGS I 250 mA V 22 V TJ -65 C to +200 C TSTG -65 C to +200 C θJC 40 C/W O O O O 1 = Base 2 = Collector 3 = Emitter O Millimeters Min Max 0.790 0.810 0.240 0.260 0.144 0.170 0.115 0.125 0.055 0.065 0.045 0.055 0.115 0.135 0.003 0.006 0.225 0.275 0.220 0.240 0.125 0.135 0.552 0.572 Dim: A B C D E F H J K N Q U Inches Min 20.07 6.10 3.66 2.93 1.40 1.15 2.93 0.08 5.72 5.59 3.18 14.03 Max 20.57 6.60 4.31 3.17 1.65 1.39 3.42 0.15 6.98 6.09 3.42 14.52 NONE CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 22 V BVCES IC = 10 mA 50 V BVCBO IC = 1.0 mA 45 V ICBO VCB = 28 V BVEBO IE = 250 µA hFE VCE = 5.0 V IC = 100 mA ft VCE = 20 V IE = 120 mA Cob VCB = 28 V GPE LG VCE = 20 V f = 2.0 GHz 250 3.5 V 20 120 3.0 f = 1.0 MHz ICQ = 120 mA Pout = 0.5 W 10 -0.2/+1.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 --GHz 3.5 Specifications are subject to change without notice. µA pF dB REV. A 1/1