AGILENT MSA-0186

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0186
Features
Description
• Cascadable 50 Ω Gain Block
The MSA-0186 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
• 3 dB Bandwidth:
DC to 0.9 GHz
• High Gain:
17.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
Note:
silicon bipolar MMIC process
1. Refer to PACKAGING section “Tapewhich uses nitride self-alignment,
and-Reel Packaging for Semiconductor
Devices”.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9694E
OUT
MSA
Vd = 5 V
6-262
86 Plastic Package
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
MSA-0186 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
40 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance[2,4]:
θjc = 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.7 mW/°C for TC > 127°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω
Power Gain (|S21| 2)
GP
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
Units
f = 0.1 GHz
f = 0.5 GHz
dB
f = 0.1 to 0.6 GHz
dB
Min.
Typ.
15.5
18.5
17.5
± 0.7
GHz
Input VSWR
0.9
f = 0.1 to 3.0 GHz
Output VSWR
f = 0.1 to 3.0 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
Max.
1.3:1
1.2:1
dB
5.5
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
1.5
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.0
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
200
4.0
5.0
6.0
–9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0186-BLK
100
Antistatic Bag
MSA-0186-TR1
1000
7" Reel
For more information refer to PACKAGING section, “Tape and Reel
Packaging for Semiconductor Devices.”
6-263
MSA-0186 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 17 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.05
.06
.07
.08
.08
.09
.10
.10
.07
.02
.06
.14
.23
.31
.45
148
124
103
89
76
66
50
35
12
–12
165
150
137
125
105
18.5
18.3
18.1
17.7
17.4
17.0
16.2
15.3
13.2
11.3
9.8
8.3
7.0
5.7
3.3
8.39
8.22
8.03
7.67
7.42
7.06
6.47
5.83
4.57
3.67
3.09
2.60
2.24
1.93
1.46
171
162
154
146
139
131
119
107
83
64
50
34
20
6
–17
–23.0
–22.8
–22.6
–22.2
–21.9
–21.4
–20.5
–19.6
–17.7
–16.1
–14.8
–13.9
–13.4
–13.0
–12.7
.071
.073
.074
.078
.081
.085
.094
.105
.131
.157
.182
.202
.213
.223
.231
4
9
13
14
17
21
25
29
30
27
24
19
12
5
–5
.08
.08
.07
.07
.06
.06
.07
.07
.08
.08
.08
.09
.09
.09
.09
–7
–14
–24
–31
–39
–47
–67
–89
–165
156
134
124
117
114
132
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
TC = +85°C
TC = +25°C
TC = –25°C
20
12
3
0
I d = 13 mA
I d = 17 mA
I d = 25 mA
0.1
P1 dB (dBm)
6
5
0
0.3 0.5
1.0
3.0
6.0
0
1
2
FREQUENCY (GHz)
4
5
6
7.0
I d = 20 mA
4
6.5
I d = 13 mA
I d = 17 mA
I d = 20 mA
I d = 17 mA
0
NF (dB)
2
6.0
I d = 13 mA
5.5
–2
–4
0.1
5.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
16
7
NF
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-264
6
5
5
4
4
3
P1 dB
2
1
0
–25
0
+25
+55
+85
TEMPERATURE (°C)
Figure 2. Device Current vs. Voltage.
6
P1 dB (dBm)
3
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 17 mA.
GP
17
6
10
9
18
7
15
I d (mA)
G p (dB)
18
15
G p (dB)
25
Gain Flat to DC
21
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz,
Id=17 mA.
NF (dB)
24
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
45°
RF INPUT
1
GROUND
1.52 ± 0.25
(0.060 ± 0.010)
4
RF OUTPUT
AND DC BIAS
A01
GROUND
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
2
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-265