MICROSEMI 2N1893

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
Qualified Level
JAN
JANTX
JANTXV
2N1893
2N1893S
2N720A
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (RBE = 10 Ω)
Collector Current
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
Total Power Dissipation
Symbol
All Devices
Units
VCEO
VCBO
VEBO
VCER
IC
80
120
7.0
100
500
2N720A 2N1893, S
0.5
0.8
1.8
3.0
-65 to +200
Vdc
Vdc
Vdc
Vdc
mAdc
PT
TJ, Tsrg
TO-18 (TO-206AA)*
2N720A
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S
Thermal Resistance, Junction-to-Case
97
58
RθJC
0
0
0
1) Derate linearly 2.86 mW/ C for 2N720A, 4.57 mW/ C for 2N1893, S TA > 25 C
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
Unit
C/W
0
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10 Ω
Collector-Base Cutoff Current
VCB = 120 Vdc
VCB = 90 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
V(BR)CEO
V(BR)CER
Vdc
80
Vdc
100
ICBO
10
10
IEBO
10
10
µAdc
ηAdc
µAdc
ηAdc
120101
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2N720A; 2N1893; 2N1893S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
hFE
20
35
40
120
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Voltage
IC = 150 mAdc, IB = 15 mAdc
VCE(sat)
5.0
VBE(sat)
1.3
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
VCE =5.0 Vdc, IC = 1.0 mAdc
VCE =10 Vdc, IC = 5.0 mAdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
VCB = 10 Vdc, IC = 5.0 mAdc
Small-Signal Short-Circuit Output Admittance
VCB = 10 Vdc, IC = 5.0 mAdc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
hfe
hib
3.0
10
35
45
100
4.0
8.0
hob
Cobo
0.5
2
15
Ω
µΩ
PF
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 3 of MIL-PRF-19500/182)
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
t
on + toff
30
ηs
120101
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