2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector − Emitter Voltage VCEO 140 160 Vdc Collector − Base Voltage VCBO 160 180 Vdc Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 1 EMITTER MARKING DIAGRAM 12 TO−92 CASE 29 STYLE 1 2N 55xx YWW 3 55xx Y WW Specific Device Code = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 3 1 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 140 160 − − 160 180 − − 6.0 − Vdc − − − − 100 50 100 50 nAdc − 50 nAdc 2N5550 2N5551 60 80 − − (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 2N5551 60 80 250 250 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 2N5551 20 30 − − Both Types − 0.15 2N5550 2N5551 − − 0.25 0.20 Both Types − 1.0 2N5550 2N5551 − − 1.2 1.0 fT 100 300 MHz Cobo − 6.0 pF − − 30 20 50 200 − − 10 8.0 OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Adc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE − VCE(sat) Vdc VBE(sat) Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 2N5550 2N5551 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) hfe pF NF 2N5550 2N5551 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 − dB 2N5550, 2N5551 ORDERING INFORMATION Package Shipping† 2N5550 TO−92 5,000 Unit / Bulk 2N5550RLRA TO−92 2,000 Tape & Reel 2N5550RLRP TO−92 2,000 Tape & Ammo Box TO−92 (Pb−Free) 2,000 Tape & Ammo Box TO−92 5,000 Unit / Bulk TO−92 (Pb−Free) 5,000 Unit / Bulk 2N5551RL1 TO−92 2,000 Tape & Reel 2N5551RLRA TO−92 2,000 Tape & Reel 2N5551RLRM TO−92 2,000 Tape & Ammo Box 2N5551RLRP TO−92 2,000 Tape & Ammo Box 2N55551ZL1 TO−92 2,000 Tape & Ammo Box Device 2N5550RLRPG 2N5551 2N5551G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 500 h FE, DC CURRENT GAIN 300 200 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 25°C 100 −55 °C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 3 10 20 30 50 70 100 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2N5550, 2N5551 1.0 0.9 0.8 0.7 IC = 1.0 mA 0.6 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 101 IC, COLLECTOR CURRENT (A) µ VCE = 30 V 100 TJ = 125°C 10−1 10−2 75°C REVERSE 10−3 FORWARD 25°C 10−4 10−5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut−Off Region 1.0 θV, TEMPERATURE COEFFICIENT (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 2.0 1.0 0.5 VC for VCE(sat) 0 − 0.5 − 1.0 − 1.5 VB for VBE(sat) − 2.0 − 2.5 0.1 100 TJ = − 55°C to +135°C 1.5 Figure 4. “On” Voltages 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients http://onsemi.com 4 50 100 2N5550, 2N5551 100 70 50 Vin 100 10 s INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 F VCC 30 V 3.0 k RC RB Vout 5.1 k Vin C, CAPACITANCE (pF) VBB −8.8 V 10.2 V 1N914 100 TJ = 25°C 30 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 3.0 5.0 7.0 10 20 Figure 7. Capacitances 1000 5000 IC/IB = 10 TJ = 25°C 500 2000 t, TIME (ns) 100 td @ VEB(off) = 1.0 V 30 VCC = 120 V tf @ VCC = 30 V 500 300 200 20 10 0.2 0.3 0.5 IC/IB = 10 TJ = 25°C 1000 tr @ VCC = 30 V 50 tf @ VCC = 120 V 3000 tr @ VCC = 120 V 300 t, TIME (ns) 2.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 200 0.5 0.7 1.0 ts @ VCC = 120 V 100 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 50 0.2 0.3 0.5 200 Figure 8. Turn−On Time 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 9. Turn−Off Time http://onsemi.com 5 100 200 2N5550, 2N5551 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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