PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS (UNIT: mm) The NES2527B-30 is power GaAs FET which 24±0.3 provides high output power and high gain in the 2.5 - 2.7 20.4 GHz band. SOURCE Internal input matching circuits are designed to 1.0±0.1 GATE optimize performance. The device has a 0.8 µm gate length for increased linear gain. To reduce thermal 2.4 resistance, the device uses PHS (Plated Heat Sink) 17.4±0.3 technology. 8.0 The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for R1.2 surface stability. DRAIN FEATURES 0.1 • High output power • High gain 2.4 • High power added efficiency 1.8 4.5 MAX 0.2 MAX • Internally matched input • High reliability QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDS 15 V Gate to Source Voltage VGS −7 V Gate to Drain Voltage VGD −18 V Drain Current ID 27 A Gate Current IG 180 mA Total Power Dissipation PT(*) 110 W Channel Temperature Tch 175 °C Storage Temperature Tstg −65 to +175 °C * TC = 25 °C The information in this document is subject to change without notice. Document No. P12381EJ1V0DS00 (1st edition) Date Published February 1997 N Printed in Japan © 1997 NES2527B-30 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT Idss ðð 18.0 ðð A VDS = 2.5 V, VGS = 0 V VP ð4.0 ð2.6 ðð V VDS = 2.5 V, IDS = 80 mA Rth ðð 1.3 1.5 °C/W Channel to Case Pð1 44.0 45.0 ðð dBm GL 11.5 13.0 ðð dB freq = 2.5/2.7 GHz VDS = 10 V IDS = 6.0 A (RF OFF) K add ðð 40.0 ðð % ðð ð42.0 ðð dBc Saturated Drain Current Pinch-off Voltage Thermal Resistance Output Power at 1 dB G.C.P *3 Linear Gain Power Added Efficiency 3rd Order Intermodulation Distortion *1 IM3 *1 PO = 33.0 dBm, 'f = 1.0 MHz RECOMMENDING OPERATING LIMITS Rg*2 (:) VDS (V) Tch (°C) G.C.P*3 Tcase (°C) 30 to 10 to 130 to 3 dBcomp to 62 *2 Rg is the series resistance between the gate supply and the FET gate. *3 G.C.P: Gain Compression Point 2 TEST CONDITIONS NES2527B-30 TYPICAL CHARACTERISTICS (TA = 25 °C) OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs INPUT POWER 80 POUT 15.0 Pout - Output Power - dBm 60 10.0 40 50 EFF ID - Drain Current - A η add - Efficiency - % 70 45 40 ID 30 5.0 35 TEST CONDITIONS Freq = 2.5 (GHz) VDS = 10.0 (V) IDS = 6.0 (A) Rg = 0 (Ω) 25 30 35 Pin - Input Power - dBm OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs INPUT POWER 80 POUT 15.0 Pout - Output Power - dBm 60 10.0 40 50 EFF ID - Drain Current - A η add - Efficiency - % 70 45 40 ID 30 5.0 35 TEST CONDITIONS Freq = 2.7 (GHz) VDS = 10.0 (V) IDS = 6.0 (A) Rg = 0 (Ω) 25 30 35 Pin - Input Power - dBm 3 NES2527B-30 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5