Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS (on) ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings Parameter Value Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -8.0 A ID @ VGS = -12V, TC = 100°C Continuous Drain Current -5.0 A PD @ TC = 25°C Power Dissipation 75 W VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 75 mJ IAR Avalanche Current -8.0 A EAR Repetitive Avalanche Energy 7.5 mJ TJ Operating Junction Range -55 to 150 °C Pre-Irradiation Electrical Characteristics @ T J = 25°° C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS (th) Gate Threshold Voltage IDSS Typ. Max Units Test Conditions -200 - - V VGS=0V, ID=-1.0mA - - 0.505 Ω VGS=-12V, ID=-5.0A -2.0 - -4.0 V VDS=VGS, ID=-1.0mA Zero Gate Voltage Drain Current - - -10 µA VDS= -160V, VGS=0V IDSS Zero Gate Voltage Drain Current - - -25 µA VDS =-160V, TJ=125°C IGSS Gate-to-Source Leakage Forward - - -100 nA VGS=-20V IGSS Gate-to-Source Leakage Reverse - - 100 nA VGS=20V Qg Total Gate Charge - - 43 nC VGS=-12V, ID=-8.0A Typ. Max Units - 1.67 °C/W Thermal Resistance Parameter RthJC Junction-to-Case Min - Test Conditions 01/23/01