Power Transistors 2SA0914 (2SA914) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open) VCEO −150 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −50 mA Peak collector current ICP −100 mA Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 3.05±0.1 • A complementary pair with 2SC1953, is optimum for the predriver stage of a 60 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 11.0±0.5 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −150 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 hFE VCE = −5 V, IC = −10 mA VCE(sat) IC = −30 mA, IB = −3 mA Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency VCB = −10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Conditions VCB = −6 V, IE = 0, f = 1 MHz Cob Min 130 Typ Max Unit V V −1 µA 330 −1 V 70 MHz 5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE 130 to 220 185 to 330 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2003 SJD00005CED 1 2SA0914 PC Ta IC VCE 0.8 0.4 −60 −300 µA −250 µA −40 −200 µA −150 µA −100 µA −20 80 120 0 160 −2 0 Forward current transfer ratio hFE −1 25°C TC = 100°C −25°C −1 −10 −100 Collector current IC (mA) 400 300 25°C −25°C 200 100 0 − 0.1 −1 −10 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 3 2 1 −10 0 −100 Collector-base voltage VCB (V) SJD00005CED − 0.4 − 0.8 −1.2 −1.6 −2.0 Base-emitter voltage VBE (V) fT I E TC = 100°C 4 0 −1 −40 0 −12 500 IE = 0 f = 1 MHz TC = 25°C 5 −60 −20 300 VCE = −5 V Cob VCB 6 −10 −80 hFE IC −10 − 0.01 − 0.1 −8 600 IC / IB = 10 − 0.1 −6 −25°C TC = 100°C Collector-emitter voltage VCE (V) VCE(sat) IC −100 −4 25°C −100 Transition frequency fT (MHz) 40 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) IB = −500 µA −50 µA 0 VCE = −5 V TC = 25°C −450 µA −400 µA −350 µA Collector current IC (mA) Collector current IC (mA) Collector power dissipation PC (W) 1.2 0 2 IC VBE −120 −80 1.6 −100 VCB = −10 V f = 100 MHz TC = 25°C 250 200 150 100 50 0 1 10 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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