NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806–866MHz. Features: D Designed for 806–866MHz Mobile Equipment D 18W Min., with Greater than 6dB Gain at 836MHz D Withstands 10:1 VSWR at Rated Operating Conditions D Matched Input Technology D Common Base Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8°C/W Electrical Characteristic: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 50mA, IB = 0, Note 1 16 – – V V(BR)CES IC = 50mA, VBE = 0, Note 1 36 – – V V(BR)EBO IE = 10mA, iC = 0 4 – – V mA Static Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICES VCE = 15V, VBE = 0 – – 10 DC Current Gain hFE VCE = 6V, IC = 1A 20 – – Note 1. Pulsed through 25mH indicator. Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Output Power PO VCE = 12.5V, f = 836MHz 18 – – W Power Gain PG VCE = 12.5V, f = 836MHz 6 – – dB Impedance Zs VCE = 12.5V, Pi = 15W, f = 836MHz – 3.0– j4.8 – Ω – 1.6– j2.5 – Ω – 20 – pF Zcl Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz .725 (18.42) .325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia B C .960 (24.38) Max E B .225 (5.72) Max .380 (5.72) Dia Max .285 (7.25) Max .180 (4.57) Max .730 (18.54) .960 (24.38) Max