2SC5028 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5028 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High collector power dissipation: PC = 1.3 W • High-speed switching: tstg = 500 ns (typ.) • Complementary to 2SA1891 (IC = 1 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.2 A JEDEC ― Collector power dissipation PC 1.3 W JEITA ― Junction temperature Tj 150 °C TOSHIBA Tstg −55 to 150 °C Weight: 0.55 g (typ.) Storage temperature range 2-8M1A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 1.0 µA V (BR) CEO V IC = 10 mA, IB = 0 50 ― ― hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 hFE (2) VCE = 2 V, IC = 1.5 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V VCE = 2 V, IC = 100 mA ― 100 ― MHz VCB = 10 V, IC = 0, f = 1 MHz ― 14 ― pF ― 0.1 ― ― 0.5 ― ― 0.1 ― DC current gain Transition frequency Collector output capacitance Cob ton 20 µs Input Switching time Storage time IB2 IB1 Turn-on time fT tstg IB1 IB2 Ootput 30 Ω Collector-emitter breakdown voltage V µs 30 V Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% 1 2004-07-26 2SC5028 Marking C5028 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5028 IC – VCE hFE – IC 2.0 50 20 30 500 300 15 hFE 1.6 10 DC current gain IC (A) 100 Collector current 1000 1.2 6 0.8 4 100 Common emitter 1 2 3 10 5 Collector-emitter voltage VCE Common emitter VCE = 2 V 1 0.001 0.003 Ta = 25°C 4 0.01 0.3 1 3 5 1 3 5 VBE (sat) – IC 10 Common emitter IC/IB = 20 0.5 0.3 Ta = 100°C 0.1 0.05 −25 0.03 25 0.01 5 3 1 0.5 0.3 0.1 0.05 0.03 Common emitter IC/IB = 20 0.005 0.003 0.001 0.1 (V) Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 1 0.03 Collector current IC (A) 5 VCE (sat) – IC 3 25 30 IB = 2 mA 0 0 −25 50 3 0.4 Ta = 100°C 0.003 0.01 0.03 0.1 0.3 1 0.01 0.001 0.003 3 5 0.01 0.03 0.1 0.3 Collector current IC Collector current IC (A) (A) IC – VBE 2.0 Common emitter Collector current IC (A) VCE = 2 V 1.6 1.2 0.8 Ta = 100°C 25 −25 0.4 0 0 0.2 0.4 0.6 Base-emitter voltage 0.8 VBE 1.0 1.2 (V) 3 2004-07-26 2SC5028 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Ta = 25°C 1 1m 10 m 100 m 1 10 Pulse width tw 100 (s) Safe Operating Area PC – Ta 1.6 10 ms* Collector current IC (A) 3 IC max (continuous) 1 ms* 100 ms* 1 0.3 DC operation Ta = 25°C 0.1 *: Single nonrepetitive pulse Ta = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.05 0.01 0.1 0.3 1 Collector-emitter voltage 10 VCE 1.4 1.0 1.2 0.8 0.6 0.4 0.2 0 0 VCEO max 3 PC (W) 5 IC max (pulsed)* Collector power dissipation 10 0.5 1000 30 25 50 75 100 Ambient temperature 100 125 Ta 150 175 (°C) (V) 4 2004-07-26 2SC5028 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26