PD412PI PD412PI Compact Package Type Photodiode with Condensing Lens ■ Features ■ Outline Dimensions 1. High sensitivity (TYP. 0.5A/W at λ p= 780nm) 4.0 ± 0.2 Detector center 2. High speed response R1.75 ± 0.1 2.0 ± 0.2 Unit V mW ˚C ˚C ˚C (2.5 ) + 1.5 - 1.0 0.2 0.1 1 1 Anode 2 Cathode *Tolerance : ± 0.15 * ( ) : Reference dimensions ❈ Dimension at lead root 8˚ 2.15mm (Ta=25˚C) 8˚ 2 2 8˚ Symbol Rating VR 32 P 150 - 25 to +85 T opr - 40 to +100 T stg 260 T sol 2-0.4 +- 17.15 MIN. 0.5 8˚ 1 8˚ 3.75 8˚ 0.5 Transparent epoxy resin 8˚ 2.15 0.8 + 0.2 - 0.1 2.54 ❈ ■ Absolute Maximum Ratings 5.0 ± 0.2 1.5 8˚ ± 0.2 2-0.45 1. Optoelectronic switches 2. MD (mini disk) laser power monitors MAX. 0.4 Rest of gate 2.4 ■ Applications Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature (Unit : mm) Soldering area *1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PD412PI ■ Electro-optical Characteristics Parameter Shortcircuit current (Ta=25 ˚C) Symbol Isc *2 Conditions E V = 100 lx MIN. 3.5 TYP. 4.7 MAX. 6.3 Unit µA E V = 100 lx - 0.2 - % /˚C Shortcircuit current temperature coefficient βT Dark current Id VR = 10V, Ee= 0 - 0.5 10 nA Dark current temperature coefficient αT VR = 10V, Ee= 0 - 3.5 5.0 times/10˚C Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Ct λp K tr tf VR = 3V, f= 1MHZ - 100 800 0.5 250 pF nm A/W 250 350 - - ± 45 - ˚ Rise Time Fall Time Response time *2 l = 780nm R L = 1kΩ V R = 10V ∆ θ Half intensity angle *2 E V : Illuminance by CIE standard light source A (tungsten lamp) Fig. 2 Shortcircuit Current vs. Illuminance Fig. 1 Power Dissipation vs. Ambient Temperature 1000 Shortcircuit current I SC ( µ A) Power dissipation P (mW) 200 150 100 50 0 - 25 0 25 50 75 85 Ambient temperature T a ( ˚C) 100 Ta=25˚C 100 10 1 0.1 0.01 1 10 100 1000 Illuminance E V (lx) 10000 ns PD412PI Fig. 3 Spectral Sensitivity Fig. 4 Dark Current vs. Ambient Temperature 100 90 -7 10 -8 10 -9 VR=10V (A) 60 d 70 Dark current I 80 Relative sensitivity (%) 10 Ta=25˚C 50 40 30 20 10 10 10 - 10 -11 -12 10 0 400 500 600 700 800 10 900 1000 1100 1200 - 25 Wavelength λ (nm) 1000 10 1 10 100 250 200 150 100 50 0 0.01 0.1 1 10 Fig. 8 Radiation Diagram - 20˚ - 10˚ 0 Light source : CIE standard light source A (tungsten lamp) 100 (Ta = 25˚C ) +10˚ + 20˚ 100 -30˚ 110 + 30˚ -40˚ 100 -50˚ 95 -60˚ -70˚ 90 Relative sensitivity (%) 80 105 60 + 40˚ 40 + 50˚ + 60˚ 20 + 90˚ -90˚ 0 25 50 75 Ambient temperature T a (˚C) 100 + 70˚ + 80˚ -80˚ 85 - 25 100 Reverse voltage VR ( V) Fig. 7 Relative Output vs. Ambient Temperature Relative output (%) 75 f=1MHz Ta=25˚C Reverse voltage V R (V) 115 50 300 Terminal capacitance C t ( pF ) Dark current I d (pA) 100 1 25 Fig. 6 Terminal Capacitance vs. Reverse Voltage Ta=25˚C 0.1 0 Ambient temperature T a (˚C) Fig. 5 Dark Current vs. Reverse Voltage 0.1 0.01 -13 0 Angular displacement θ PD412PI Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) Fig. 10 Response Time vs. Load Resistance 100 100 VR=10V Ta=25˚C 10 Response time t r,tf ( µ s ) Relative output (%) GL538 GL537 1 0.1 10 IF = 20mA Ta = 25˚C -4 10 -3 10 -2 10 IOUT = 0.1mA Input 10V 90% RL Pulse generator Output tr tr, tf 0.1 10 2 10 3 10 4 Load resistance R L ( Ω ) Test Circuit for Response Time PD412PI + Output 1 0.01 10 1 -1 Distance between emitter and detector d (m) Semiconductor laser 10 10% tf ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) 10 5