PESD1LIN LIN bus ESD protection diode Rev. 02 — 12 November 2008 Product data sheet 1. Product profile 1.1 General description PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect Network (LIN) bus line from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features n ESD protection of one automotive LIN bus line n Asymmetrical diode configuration ensures an optimized ElectroMagnetic Immunity (EMI) of a LIN Electronic Control Unit (ECU) n Due to the integrated diode structure only one very small SOD323 package is needed n Max. peak pulse power: PPP = 160 W at tp = 8/20 µs n Low clamping voltage: VCL = 40 V at IPP = 1 A n Ultra low leakage current: IRM < 1 nA n ESD protection of up to 23 kV n IEC 61000-4-2, level 4 (ESD) n IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs 1.3 Applications n LIN bus protection n Automotive applications 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Conditions PESD1LIN (15 V) PESD1LIN (24 V) Cd diode capacitance VR = 0 V; f = 1 MHz Min Typ Max Unit - - 15 V - - 24 V - 13 17 pF PESD1LIN NXP Semiconductors LIN bus ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 cathode 1 (15 V) 2 cathode 2 (24 V) 1 Graphic symbol 2 1 2 006aab041 3. Ordering information Table 3. Ordering information Type number PESD1LIN Package Name Description Version SC-76 plastic surface-mounted package; 2 leads SOD323 4. Marking Table 4. Marking codes Type number Marking code PESD1LIN AM 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power IPP peak pulse current Tj junction temperature Tamb Tstg PPP [1] Min Max Unit tp = 8/20 µs [1] - 160 W tp = 8/20 µs [1] - 3 A - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. PESD1LIN_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 2 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode Table 6. ESD maximum ratings Symbol Parameter Conditions electrostatic discharge voltage VESD IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] [1] Min Max Unit - 23 kV - 10 kV Device stressed with ten non-repetitive ESD pulses. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD1LIN_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 3 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage PESD1LIN (15 V) - - 15 V PESD1LIN (24 V) - - 24 V reverse leakage current IRM PESD1LIN (15 V) VRWM = 15 V - <1 50 nA PESD1LIN (24 V) VRWM = 24 V - <1 50 nA PESD1LIN (15 V) 17.1 18.9 20.3 V PESD1LIN (24 V) 25.4 27.8 30.3 V - 13 17 pF IPP = 1 A - - 25 V IPP = 5 A - - 44 V IPP = 1 A - - 40 V IPP = 3 A - - 70 V PESD1LIN (15 V) IR = 1 mA - - 225 Ω PESD1LIN (24 V) IR = 1 mA - - 300 Ω breakdown voltage VBR Cd diode capacitance VCL clamping voltage PESD1LIN (15 V) PESD1LIN (24 V) VR = 0 V; f = 1 MHz [1] differential resistance rdif [1] IR = 5 mA Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. 006aaa164 104 001aaa193 1.2 PPP PPP (W) PPP(25°C) 103 0.8 102 0.4 10 1 10 102 103 0 104 0 t p (µs) 50 100 150 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values PESD1LIN_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 4 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T. (Device Under Test) vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD1LIN (24V) GND PESD1LIN (15V) GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND PESD1LIN (15V) GND PESD1LIN (24V) vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 5. vertical scale = 20 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa166 ESD clamping test setup and waveforms PESD1LIN_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 5 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode 7. Application information The PESD1LIN is designed for the protection of one LIN bus signal line from the damage caused by ESD and surge pulses. The PESD1LIN provides a surge capability of up to 160 W per line for a 8/20 µs waveform. power application (e.g. electro motor, inductive loads) application (e.g. voltage regulator and microcontroller) CBAT BAT LIN LIN transceiver 24 V LIN node connector CMASTER/SLAVE 15 V GND PESD1LIN 006aaa678 Fig 6. Typical application: ESD protection of one automotive LIN bus line Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESD1LIN as close to the input terminal or connector as possible. 2. The path length between the PESD1LIN and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protection conductors in parallel with unprotected conductor. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD1LIN_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 6 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode 8. Package outline 1.35 1.15 1.1 0.8 0.45 0.15 1 2.7 2.3 1.8 1.6 2 0.40 0.25 Dimensions in mm Fig 7. 0.25 0.10 03-12-17 Package outline SOD323 (SC-76) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD1LIN [1] Package Description SOD323 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 13. PESD1LIN_2 Product data sheet Packing quantity © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 7 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode 10. Soldering 3.05 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 2.2 Dimensions in mm 0.5 (2×) 0.6 (2×) Fig 8. sod323_fr Reflow soldering footprint SOD323 (SC-76) 5 2.9 1.5 (2×) solder lands solder resist occupied area 2.75 1.2 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 9. Wave soldering footprint SOD323 (SC-76) PESD1LIN_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 8 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD1LIN_2 20081112 Product data sheet - PESD1LIN_1 Modifications: PESD1LIN_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. • • • • Figure 6: enhanced Table 6: ESD electrostatic discharge capability redefined to VESD electrostatic discharge voltage Figure 7: superseded by minimized package outline drawing Section 10 “Soldering”: added Section 12 “Legal information”: updated 20041026 Product data sheet PESD1LIN_2 Product data sheet - - © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 9 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices — These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer’s own risk. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD1LIN_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 12 November 2008 10 of 11 PESD1LIN NXP Semiconductors LIN bus ESD protection diode 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 November 2008 Document identifier: PESD1LIN_2