SEMICONDUCTOR PG05TADF10 TECHNICAL DATA TVS Diode Array for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. C F E FEATURES A 9 Transient protection for data lines to 8 7 6 4 5 1 IEC 61000-4-2(ESD) 20KV (air/contact) B 3 2 G 30 Watts peak pulse power (tp=8/20 )s H Small package for use in portable electronics. D Suitable replacement for Multi-Layer Varistors in ESD protection applications. J Protects one I/O or power line. K Low clamping voltage. Low leakage current. 1. 2. 3. 4. 5. APPLICATIONS USB 2.0, 10/100/1000 Ethernet, FireWire, DVI, HDMI, S-ATA DIM A B C D E F G H J K Input / Output 1 Input / Output 2 GND Input / Output 3 Input / Output 4 Mobile Communication MILLIMETERS _ 0.035 2.3 + _ 0.035 1+ 2.0 _ 0.025 0.2 + 0.5 _ 0.025 0.4 + _ 0.025 0.35 + _ 0.025 0.94 + _ 0.01, -0.02 0.31 + 0.05 MAX Consumer Products (STB, MP3, DVD, DSC...) DFN10 LCD-Display, Camera Notebooks and desktop computers, peripherals Marking Type Name Z1 0825 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Current (tp=8/20 s) IPP 3 A Operating Temperature Range TOP -40~125 Storage Temperature Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage 1 2 4 5 MIN. TYP. MAX. UNIT VRWM - - - 5.3 V It=1mA (I/O to GND) 6 - - V VRWM=5.3V (I/O to GND) - - 50 IPP=1A, tp=8/20㎲, (I/O to GND) - 10 13 IPP=3A, tp=8/20㎲, (I/O to GND) - 12 15 VR=0V, f=1MHz (I/O to GND) - 0.4 0.6 Clamping Voltage VC CJ Revision No : 0 6 TEST CONDITION IR 2009. 12. 21 7 SYMBOL Reverse Leakage Current Junction Capacitance 8 ) VBR Reverse Breakdown Voltage 9 Lot No. A V pF 1/3 PG05TADF10 FORWARD CLAMPING VOLTAGE 6 13 12 FORWARD CLAMPING VOLTAGE VFC (V) CLAMPING VOLTAGE VC (V) CLAMPING VOLTAGE 11 10 9 8 tP=8/20 us I/O to GND 7 6 5 4 3 2 tP=8/20 us GND to I/O 1 0 0 1 2 3 4 0 PEAK PULSE CURRENT IPP (Α) 1 10 -7 10 -8 10 -9 10 -10 10 -11 25 VR=5.3V I/O to GND 50 75 100 125 0.5 0.4 0.3 0.2 f=1 MHZ I/O to GND 0.1 0 150 0 1 0.5 0.6 CAPACITANCE Cj (pF) 0.7 VR=0V VR=5.3V 0.3 0.2 0.1 I/O to GND 0 0 500 1000 15000 2000 FREQUENCY f (ΜΗΖ) Revision No : 0 3 4 5 LINE CAPACITANCE 0.6 0.4 2 REVERSE VOLTAGE VR (V) LINE CAPACITANCE CAPACITANCE Cj (pF) 5 0.6 AMBIENT TEMPERATURE Ta (℃) 2009. 12. 21 4 CAPACITANCE CAPACITANCE Cj (pF) REVERSE CURRENT IR (A) -6 3 PEAK PULSE CURRENT IPP (Α) REVERSE CURRENT 10 2 2500 3000 0.5 5.3V 0.4 0V 0.3 0.2 VR=0V 0.1 f=1MHZ 0 -50 -25 0 25 50 75 100 AMBIENT TEMPERATURE Ta (℃) 2/3 PG05TADF10 C F E A 8 7 6 4 5 1 2 B 3 G 9 H K J D 1. 2. 3. 4. 5. DIM A B C D E F G H J K Input / Output 1 Input / Output 2 GND Input / Output 3 Input / Output 4 MILLIMETERS _ 0.035 2.3 + _ 1 + 0.035 2.0 _ 0.025 0.2 + 0.5 _ 0.4 + 0.025 _ 0.025 0.35 + _ 0.025 0.94 + _ 0.01, -0.02 0.31 + 0.05 MAX DFN10 2009. 12. 21 Revision No : 0 3/3