SEMICONDUCTOR PG05TAVSM TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES E ・Transient protection for data lines to B IEC 61000-4-2(ESD) 20kV(Air/Contact) ・Protects one I/O or power line. 1 DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.04 0.55 + C _ 0.05 D 0.2 + _ 0.05 E 1.2 + _ 0.05 G 0.40 + _ 0.05 H 0.15 + _ 0.05 J 0.2 + K 5 Max D G 2 A ・Suitable replacement for Multi-Layer Varistors in ESD protection applications. G ・Small package for use in portable electronics. 3 J ・Low clamping voltage. ・Low leakage current. K C K H APPLICATIONS USB 2.0, 10/100/1000 Ethernet, FireWire, DVI, HDMI, S-ATA Mobile Communication Consumer Products (STB, MP3, DVD, DSC...) LCD-Display, Camera VSM(1) Notebooks and desktop computers, peripherals Marking Z1 Type Name MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Current (tp=8/20μs) IPP 3 A Operating Temperature Range TOP -40～125 ℃ Storage Temperature Tstg -55～150 ℃ 3 D2 D1 2 1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5.3 V It=1mA 6 - - V VRWM=5.3V - - 50 nA IPP=1A, tP=8/20㎲ - 10 13 IPP=3A, tP=8/20㎲ - 12 15 from pin 1/2 to 3 - 0.4 0.6 from pin 1 to 2, Pin 3 not connected - 0.2 0.4 VBR Reverse Breakdown Voltage Reverse Leakage Current IR Clamping Voltage VC CJ Junction Capacitance 2009. 12. 21 Revision No : 0 VR=0V, f=1MHz V pF 1/3 PG05TAVSM CLAMPING VOLTAGE FORWARD CLAMPING VOLTAGE 6 FORWARD CLAMPING VOLTAGE VFC (V) CLAMPING VOLTAGE VC (V) 13 12 11 10 9 8 tP=8/20㎲ 7 from pin 1/2 to 3 6 5 4 3 2 tP=8/20㎲ 1 from pin 3 to 1/2 0 0 1 2 3 0 4 PEAK PULSE CURRENT IPP (Α) 1 2 10 -7 10 -8 10 -9 10 -10 10 -11 0.6 25 from pin 1/2 to 3 VR=5.3V 50 75 100 125 0.5 0.4 0.3 0.2 0.1 f=1 MHZ 0 150 0 AMBIENT TEMPERATURE Ta (℃) 1 3 4 5 LINE CAPACITANCE 0.7 CAPACITANCE Cj (pF) 0.6 CAPACITANCE Cj (pF) 2 REVERSE VOLTAGE VR (V) LINE CAPACITANCE 0.5 VR=0V 0.4 VR=5.3V 0.3 0.2 0.1 from pin 1/2 to 3 0 0.6 0.5 5.3V 0.4 0V 0.3 0.2 0.1 f=1MHz 0 0 500 1000 1500 2000 FREQUENCY f (MHz) 2009. 12. 21 5 CAPACITANCE CAPACITANCE Cj (pF) REVERSE CURRENT IR (A) -6 4 PEAK PULSE CURRENT IPP (Α) REVERSE CURRENT 10 3 Revision No : 0 2500 3000 -50 -25 0 25 50 75 100 AMBIENT TEMPERATURE Ta (℃) 2/3 PG05TAVSM E 1 A D G 2 G B J 3 K H C K DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.04 0.55 + C _ 0.05 D 0.2 + _ 0.05 E 1.2 + _ 0.05 G 0.40 + _ 0.05 0.15 + H _ 0.05 0.2 + J K 5 Max VSM(1) 2009. 12. 21 Revision No : 0 3/3