TOSHIBA 2SJ669_09

2SJ669
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III)
2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
−60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate-source voltage
VGSS
±20
V
ID
ID
−5
A
JEDEC
―
IDP
IDP
−20
A
JEITA
―
Drain power dissipation
PD
1.2
W
Single-pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
−5
A
Repetitive avalanche energy (Note 3)
EAR
0.12
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to ambient
Symbol
Max
Unit
Rth (ch−a)
104
°C / W
Note 1: The channel temperature should not exceed 150℃ during use.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2SJ669
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cutoff current
IDSS
VDS = −60 V, VGS = 0 V
—
—
−100
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
—
—
V
V (BR) DSX
ID = −10 mA, VGS = 20 V
−35
—
—
V
Vth
VDS = −10 V, ID = −1 mA
−0.8
—
−2.0
V
VGS = −4 V, ID = −2.5 A
—
0.16
0.25
VGS = −10 V, ID = −2.5 A
—
0.12
0.17
VDS = −10 V, ID = −2.5 A
2.5
5.0
—
—
700
—
—
60
—
—
90
—
—
14
—
—
24
—
—
14
—
—
95
—
—
15
—
—
11
—
—
4
—
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
tr
tr
VDS = −10 V, VGS = 0 V, f = 1 MHz
ID = −2.5 A
0V
VGS
Output
Switching time
ton
ton
tf
tf
toff
toff
Total gate charge (gate−source
plus gate−drain)
4.7 Ω
−10 V
RL = 12 Ω
Duty ≤ 1%, tw = 10 μs
Qgs
Gate−drain (“Miller”) charge
Qgd
S
pF
ns
VDD ∼
− −30 V
Qg
Gate−source charge
Ω
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
−5
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
−20
A
Forward voltage (diode)
VDSF
Reverse recovery time
trr
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V
—
—
1.7
V
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / μs
—
40
—
ns
—
32
—
nC
Marking
J669
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SJ669
ID – VDS
−5
−10
−6
−4.
−3.5
Common source
Ta = 25°C
Pulse test
−8
−4
ID – VDS
−8
ID
−3
Drain current
−2.8
−2
VGS = −2.5V
−1
0
0
−0.4
−0.8
−1.2
Drain−source voltage
−1.6
VDS
−10
−6
−4
−8
−3.5
−6
−4
−3
−2
0
−2.0
VGS = −2.5 V
0
(V)
−2
−4
ID – VGS
−8
VDS (V)
Common source
VDS = −10 V
Pulse test
−6
Drain−source voltage
(A)
ID
Drain current
VDS
25
−4
−2
100
0
−1
−2
Ta = −55°C
−3
−4
10
VGS
−1.2
−0.8
−5
−0.4
−2.5
ID = −1.2 A
0
(V)
−4
−8
Common source
VDS = −10 V
Pulse test
Ta = −55°C
25
1
Drain current
−10
ID
−16
VGS
−20
(V)
RDS (ON) − ID
0.5
−1
−12
Gate−source voltage
100
0.1
−0.1
(V)
Common source
Ta = 25°C
Pulse test
−1.6
0
−5
Drain−source ON-resistance
RDS (ON) (Ω)
⎪Yfs⎪
100
−10
VDS – VGS
⎪Yfs⎪ − ID
(S)
−8
−2.0
Gate−source voltage
Forward transfer admittance
−6
Drain−source voltage
−10
0
Common source
Ta = 25°C
Pulse test
(A)
−3
(A)
ID
Drain current
−10
Common source
Ta = 25°C
Pulse test
0.4
0.3
0.2
−4 V
0.1
VGS = −10V
0
−100
0
(A)
3
−2
−4
−6
Drain current
ID
−8
−10
(A)
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2SJ669
RDS (ON) − Ta
IDR − VDS
10
Common source
Ta = 25°C
Pulse test
(A)
Common source
Pulse test
−0.3
−3
IDR
ID = −5 A
−10
−5
−2.5
Drain reverse current
Drain−source ON-resistance
RDS (ON) (Ω)
−0.4
−1.2
−0.2
−5
VGS = −4 V
−1.2
−2.5
−0.1
VGS = −10 V
0
−80
0.1
−40
0
40
80
Ambient temperature
120
Ta
−1
1
160
0
(°C)
0.2
0.4
VGS = 0 V
0.6
0.8
Drain−source voltage
1.0
VDS
1.2
(V)
Capacitance – VDS
Vth − Ta
Common source
−2.0
Vth (V)
VGS = 0 V
Tc = 25°C
1000
Coss
Crss
−1
−10
Drain−source voltage
−40
0
40
80
VDS (V)
Drain−source voltage
1.5
1.0
0.5
−25
80
120
Ambient temperature
160
Ta
200
Common source
ID = −5 A
−40
Ta = 25°C
−15
−12V
−20
4
−10
−24V
VDD = −48 V
−10
−5
VGS
0
5
10
15
Total gate charge
(°C)
−20
Pulse test
−30
0
40
160
(°C)
−50
VDS
0
120
Ta
Dynamic input/output
characteristics
(W)
PD
−0.4
(V)
2.0
Drain power dissipation
−0.8
Ambient temperature
PD − Ta
0
−1.2
0
−80
−100
VDS
−1.6
(V)
10
−0.1
Common source
VDS = −10 V
ID = 1 mA
Pulse test
20
Qg
25
30
VGS
Capacitance
100
Gate threshold voltage
Ciss
C
(pF)
f = 1 MHz
Gate−source voltage
10000
0
(nC)
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2SJ669
rth − tw
1
rth (t)/Rth (ch-a)
Normalized transient thermal impedance
10
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
Single pulse
T
Duty = t/T
Rth (ch-a) = 104°C/W
0.001
100 μ
1m
10 m
100 m
Pulse width
1
tw
10
100
(s)
EAS – Tch
50
Safe operating area
(mJ)
100
100 μs *
ID max (Continuous)
Avalanche nergy
10
EAS
ID max (Pulsed) *
Drain current
ID
(A)
1 ms *
1
DC operation
Ta = 25°C
40
30
20
10
0.1
0
25
0.01
75
100
125
Channel temperature (initia)
*:Single nonrepetitive pulse
150
Tch
(°C)
Tc = 25°C
Curves
must
be
linearly
with
increase
derated
in
VDSS max
temperature.
0.001
0.01
50
0.1
1
Drain−source voltage
10
VDS
BVDSS
0V
100
IAR
−15 V
(V)
VDD
Test circuit
RG = 25 Ω
VDD = −25 V, L = 2.2 mH
5
VDS
Waveform
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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