2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 ±50 ±200 ±16 520 60 150 -55 ~ +150 Unit V A A V mJ W °C °C L=0.277mH,Vcc=12V - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol BV DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-c) R th(ch-a) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=50A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 30 1,0 Test conditions channel to case channel to air Min. 22 Typ. Max. 1,5 10 0,2 10 0,012 0,0075 45 2750 1300 600 13 180 55 150 2,0 500 1,0 100 0,017 0,01 1,14 85 0,17 1,71 130 4130 1950 900 20 270 83 230 50 Typ. Max. 2,08 125,0 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2688-01 N-channel MOS-FET 30V 0,017Ω ±50A FAP-IIS Series 60W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [Ω] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test;TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ 4 Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test; Tch=25oC ↑ VDS [V] ↑ 7 VDS [V] 8 → Qg [nC] Avalanche Energy Derating ↑ ↑ → VSD [V] Starting Tch [°C] → → ↑ Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] Eas [mJ] 9 Safe operation area E(AV)=f(starting Tch): Vcc=12V; IAV<=50A 10 → Forward Characteristics of Reverse Diode VGS=f(Qg): ID=50A; Tch=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source-On-State-Resistance vs. ID ↑ RDS(ON) [Ω] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch): ID=25A; VGS=10V VDS [V] → This specification is subject to change without notice! t [s] → 2SK2688-01 N-channel MOS-FET 30V 0,017Ω ±50A FAP-IIS Series 60W > Characteristics t [ns] Typical Switching Characteristics VSD [V] → Power Dissipation PD=f(TC) 125 PD / PDmax [%] 100 75 50 25 0 0 0 0 0 0 0 0 0 0 TC [°C] Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 80 60 40 20 0 0 0 0 0 0 This specification is subject to change without notice!