2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 400 V Drain-gate voltage (RGS = 20 kΩ) VDGR 400 V Gate-source voltage VGSS ±30 V (Note 1) ID 1 Pulse (Note 1) IDP 3 Drain power dissipation PD 20 W Single pulse avalanche energy (Note 2) EAS 113 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 3) EAR 2 Channel temperature Tch Storage temperature range Tstg DC Drain current A JEDEC ― JEITA SC-64 mJ TOSHIBA 2-7B1B 150 °C Weight: 0.36 g (typ.) −55 to150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2002-02-27 2SK3498 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ±10 µA V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 V IDSS VDS = 400 V, VGS = 0 V 100 µA Gate leakage current Drain-source breakdown voltage Test Condition Drain cut-OFF current V (BR) DSS ID = 10 mA, VGS = 0 V 450 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.5 A 4.2 5.5 Ω Forward transfer admittance Yfs VDS = 10 V, ID = 0.5 A 0.3 0.6 S Input capacitance Ciss 145 Reverse transfer capacitance Crss 35 Output capacitance Coss 80 14 56 26 75 5.7 3.0 2.7 Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-ON time VOUT RL = 400 Ω 50 Ω ton Switching time Fall time ID = 0.5 A 10 V VGS 0V tr tf Turn-OFF time Duty < = 1%, tw = 10 µs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − 200 V VDD ∼ − 320 V, VGS = 10 V, ID = 1 A pF ns nC Source-Drain Ratings and Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 1 A 3 A Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V −1.7 V Reverse recovery time trr IDR = 1 A, VGS = 0 V, 650 ns Reverse recovery charge Qrr dIDR/dt = 100 A/µs 14.6 µC Pulse drain reverse current (Note 1) IDRP Marking K3498 ※ Type ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2002-02-27 2SK3498 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 3 2002-02-27