SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switching Applications Analog Switch Applications Unit: mm · Suitable for high-density mounting due to compact package · High drain-source voltage · High speed switching Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 50 V Gate-Source voltage VGSS ±7 V DC ID 100 Pulse IDP 200 Drain current Drain power dissipation (Ta = 25°C) PD (Note) mA 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm × 3) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 6 mg (typ.) 0.6 mm 1.0 mm Marking Equivalent Circuit 3 3 DM 1 2 1 2 This transistor is a electrostatic sensitive device. Please handle with caution. 1 2002-04-09 SSM3K17FU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Test Condition Min Typ. Max Unit IGSS VGS = ±7 V, VDS = 0 ― ― ±5 µA V (BR) DSS ID = 0.1 mA, VGS = 0 50 ― ― V IDSS VDS = 50 V, VGS = 0 ― ― 1 µA Vth Forward transfer admittance ½Yfs½ Drain-Source ON resistance RDS (ON) VDS = 3 V, ID = 1 µA 0.9 ― 1.5 V VDS = 3 V, ID = 10 mA 20 40 ― mS ID = 10 mA, VGS = 4 V ― 12 20 ID = 10 mA, VGS = 2.5 V ― 22 40 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ― 7 ― pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ― 3 ― pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ― 7 ― pF VDD = 3 V, ID = 20 mA, VGS = 0~3 V, RG = 10 Ω, RL = 150 Ω ― 100 ― ― 40 ― Switching time Turn-on time ton Turn-off time toff ns Switching Time Test Circuit (a) Test circuit (b) VIN 3V OUT 3V IN 50 Ω 0 90% 10 Ω 1 µs RL VDD 0V (c) VOUT VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton 2 tf toff 2002-04-09 SSM3K17FU ID – VDS ID – VGS 100 1000 Common source Common source 5 Ta = 25°C 4.5 100 (mA) 4 VDS = 3 V 10 ID 60 Drain current Drain current ID (mA) 80 40 VGS = 2.5 V 20 1 Ta = 150°C 0.1 75°C 25°C 0.01 0 0 0.4 0.8 1.2 1.6 Drain-Source voltage VDS 0.001 0 2 (V) −25°C 1 2 4 5 Gate-Source voltage VGS RDS (ON) – ID Common source ID = 10 mA VGS = 2.5 V 4V 10 5 3 1 3 5 10 Drain current 30 ID 50 30 VGS = 2.5 V 20 4V 10 0 −50 100 (mA) 0 50 RDS (ON) – VGS ïYfsï – ID Forward transfer admittance ïYfsï (mS) Ta = 25°C 30 20 100 mA ID = 10 mA 4 Gate-Source voltage 150 500 Common source 2 100 Ambient temperature Ta (°C) 40 Drain-Source on resistance RDS (ON) (Ω) (V) Common source Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) 30 0 0 7 40 50 Ta = 25°C 10 6 RDS (ON) – Ta 100 1 0.5 3 6 8 VGS Common source 300 VDS = 3 V Ta = 25°C 100 50 30 10 1 10 (V) 3 5 10 Drain current 3 30 ID 50 100 (mA) 2002-04-09 SSM3K17FU Vth – Ta C – VDS 50 Common source VDS = 3 V ID = 1µA VGS = 0 V f = 1 MHz (pF) 1.6 Common source 30 1.2 Capacitance C Gate threshold voltage Vth (V) 2 0.8 Ta = 25°C 10 5 Ciss 3 Coss 0.4 Crss 1 1 0 −50 0 50 100 3 150 Ambient temperature Ta (°C) 100 300 VGS = 0~3 V RG = 10 Ω ton Common source (mA) VDD = 3 V Drain reverse current IDR 500 (ns) t 50 (V) −250 Common source Switching time 30 IDR – VDS t – ID 1000 Ta = 25°C 100 tr 50 toff 30 tf 10 5 3 1 10 5 Drain-Source voltage VDS 3 5 10 30 50 Drain current ID 300 500 1000 100 −200 D −150 G −100 S −50 0 0 (mA) VGS = 0 V Ta = 25°C −0.4 −0.8 −1.2 Drain-Source voltage VDS −1.6 −2 (V) PD – Ta Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) 200 Drain power dissipation PD (mW) 250 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 4 2002-04-09 SSM3K17FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-04-09