Photo Transistor PT086N4 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) Dimensions (Unit:mm) 2.0mW/cm 12 10 COLLECTOR CURRENT (mA) ･High Reliability ･Optical Switches ･Optical Sensors ･Edge Sensing ･Smoke Detectors COLLECTOR CURRENT (mA) FEATURES APPLICATIONS 2 1.5mW/cm2 PT086Nと同じ 8 1.0mW/cm2 6 4 0.5mW/cm2 2 -30 TO 100 -40 TO 125 125 260 UNIT V V V V mA mW ℃ ℃ ℃ ℃ 10 15 To purchase this part contact Marktech Optoelectronics at 800.984.5337 ANGULAR DISPLACEMENT 120 12 100 PT086Nと同じ 8 6 4 80 60 40 20 2 0 0 0.5 1 1.5 2 2.5 3 -90 -60 -30 0 30 60 90 ANGULAR DISPLACEMENT (deg.) IRRADIANCE(mW/cm2) VCE (V) RELATIVE RESPONSE vs λ THERMAL DERATING CURVE 300 120 250 200 150 100 50 100 0 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE(℃) *Time 5 Sec max,Position:Up to 3mm from the body 880 10.0 10.0 ±12 14 20 RELATIVE RESPONSE(%) RATINGS 30 30 5 5 50 250 5 DISSIPATION (mW) SYMBOL Vceo Vcbo Vebo Veco Ic Pc Topr Tstg Tj Tls COLLECTOR POWER ITEM Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Operating Temp. Storage Temp. Junction Temp. Lead Soldering Temp.* 400～1100 0 0 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) UNIT mA nA V nm nm μS μS deg 100 10 0 MAX 0.2 ICEL vs IRRADIANCE ICEL vs VCE 14 TYP 3.0 CURRENT(%) N4 MIN RELATIVE C0LLECTOR N4 CONDITIONS ITEM SYMBOL 2 Collector Emitter Current Icel Vce=20V,Ee=0.5mw/cm ※ Collector Dark Current Iceo Vce=20V,Ee=0mw/cm 2※ C-E Saturation Voltage VCE(sat) Ic=0.2mA,Ee=5mw/cm 2※ Spectral sensitivity λ λp Peak Sensitivity Wave Length Tr Switching time (Rise Time) RL=100Ω,Vce=5V,Ic=0.5mA Tf RL=100Ω,Vce=5V,Ic=0.5mA Switching time (Fall Time) θ Angular Response ※ Color Temperature=2870°K Standard Tungsten Lump Marktech Optoelectronics www.marktechopto.com 400 500 600 700 800 WAVELENGTH(nm) 900 1000 1100 1200