PZT157 PNP Transistor Elektronische Bauelemente Silicon Planar High Performance Transistor RoHS Compliant Product $VXIIL[RI³&´VSHFLILHVKDORJHQOHDGIUHH Description SOT-223 The PZT157 is designed for general purpose switching and amplifier applications. Features * 3 Amps Continous Current * -60 Volt VCEO REF. A C D E I H * Low Saturation Voltages Date Code 1 5 7 B C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 o MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol B J 1 2 3 4 5 Value Units VCBO Collector-Base Voltage -80 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -60 V V IC PD TJ,Tstg Parameter Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 REF. -5 Collector Current (DC) -3 Collector Current (Pulse) -6 Total Power Dissipation 2 Junction and Storage Temperature -55~+150 A W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter I EBO -5 - Typ. - *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Ton Toff 70 100 80 40 100 - -450 -0.9 -0.8 200 200 170 150 140 40 450 Collector-Base Cutoff Current Symbol BVCBO *BVCEO BVEBO I CBO Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance On-Time Off-Time Min -80 -60 -150 Max - Unit V V V -100 -100 nA nA -300 -600 -1.25 -1.0 300 30 - mV V V MH z pF nS Test Conditions I C=-100µA, I E=0 I C=-10mA, I B=0 I E=-100µA, IC=0 VCB=-60V, I E=0 VEB=- 4V,I C=0 I C=-1A,IB=-100mA I C=-3A,IB=-300mA I C=-1A,IB=-100mA I C=-1A,VCE=-2V VCE=- 2 V, I C=-50 mA VCE=- 2 V, I C=-500mA VCE=- 2 V, I C=- 1A VCE=- 2 V, I C=- 2A VCE=- 5 V, IC=-100mA,, f=100MHz VCB=-10 V , f=1MHz VCC=-10V,IC=- 500mA ,IB1=IB2=- 50mA *Measured under pulse condition. Pulse width≦300µs, Duty Cycle≦2% Spice parameter data is available upon request for this device. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 PZT157 Elektronische Bauelemente PNP Transistor Silicon Planar High Performance Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2