MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCES Collector-Emitter Voltage 80 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPSA28 625 5.0 83.3 *MMBTA28 350 2.8 **PZTA28 1,000 8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 . 1997 Fairchild Semiconductor Corporation Units mW mW/°C °C/W °C/W MPSA28 / MMBTA28 / PZTA28 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage I C = 100 µA, VBE = 0 80 V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 12 V ICBO Collector Cutoff Current VCB = 60 V, IE = 0 100 nA ICES Collector Cutoff Current VCE = 60 V, VBE = 0 500 nA IEBO Emitter Cutoff Current VEB = 10 V, IC = 0 100 nA 1.2 1.5 2.0 V V ON CHARACTERISTICS hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( on) Base-Emitter On Voltage 10,000 10,000 I C = 10 mA, VCE = 5.0 V I C = 100 mA, VCE = 5.0 V I C = 10 mA, IB = 0.01 mA I C = 100 mA, IB = 0.1 mA I C = 100 mA, VCE = 5.0 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance I C = 10 mA, VCE = 5.0, f = 100 MHz VCB = 1.0 V, IE = 0, f = 1.0 MHz 125 MHz 8.0 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain vs Collector Current 100 VCE = 5V 125 °C 80 60 25 °C 40 20 0 0.001 - 40 °C 0.01 0.1 I C - COLLECTOR CURRENT (A) P 03 0.2 VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 1.6 β = 1000 1.2 - 40 ºC 0.8 25 ºC 125 ºC 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) P 03 1000 MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 2 β = 1000 1.6 - 40 ºC 25 °C 1.2 125 ºC 0.8 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 V BEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 2 1.6 - 40 °C 25 °C 1.2 125 °C 0.8 VCE = 5V 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 P 03 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 100 VCB = 80V 10 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 P 03 BVCER- BREAKDOWN VOLTAGE (V) ICBO - COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 114.2 114 113.8 113.6 113.4 113.2 113 112.8 0.1 CAPACITANCE (pF) 20 15 C ib 10 5 C ob 2 0.1 1 10 Vce - COLLECTOR VOLTAGE(V) 100 f T - GAIN BANDWIDTH PRODUCT (MHz) f = 1.0 MHz 10 RESISTANCE (k Ω) 100 1000 Gain Bandwidth Product vs Collector Current Input and Output Capacitance vs Reverse Voltage 1 40 Vce = 5V 30 20 10 0 1 10 20 50 I C- COLLECTOR CURRENT (mA) 100 150200 MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor