QL63D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL63D5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Optical Leveler and Modules. ♦ APPLICATION Pointer Optical Leveler Laser Module ♦ FEATURES Visible Light Output: λp = 635 nm (TM Mode) Optical Power Output: 5 mW CW Package Type: TO-18 Built-in Photo Diode for Monitoring Laser Output ♦ ELECTRICAL CONNECTION Bottom View Pin Configuration ♦ ABSOLUTE MAXIMUM RATING at Tc = 25° C Items Symbols Values Unit Optical Output Power P 7 mW Laser Diode Reverse Voltage V 2 V Photo Diode Reverse Voltage V 30 V Operating Temperature Topr -10 ... +50 °C Storage Temperature Tstg -40 ... +85 °C ♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc = 25° C Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 5 - mW - Threshold Current Ith - 35 50 mA - Operating Current Iop - 45 60 mA Po = 5 mW Operating Voltage Vop - 2.2 2.7 V Po = 5 mW Lasing Wavelength λp 630 635 640 nm Po = 5 mW θII 6 8 15 deg Po = 5mW θ⊥ 22 35 40 deg Po = 5 mW ∆θ II - - 4.5 deg Po = 5 mW 2.5 deg Po = 5 mW Beam Divergence Beam Angle Monitor Current Optical Distance ∆θ⊥ - Im ∆X,∆Y,∆Z 0.1 - 0.2 - 0.5 60 mA µm Po = 5 mW ♦ PACKAGE DIMENSION mm ROITHNER LASERTECHNIK, A-1040 Vienna, Austria, Schoenbrunner Strasse 7 Tel.: +43-1-586 52 43 - 0, Fax.: +43-1-586 52 43 44 e-mail: [email protected], http://www.roithner-laser.com