ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: [email protected] http://www.roithner-laser.com RLT1550-20G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: GaInAsP/InP SQW structure Lasing wavelength: 1550 nm, single mode Typ. optical power: 20 mW Package: 9 mm (SOT-148) LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Maximum LD Current If Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 200 40 1.5 6 -20 .. +40 -40 .. +85 Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP Lasing Aperture A cw 1x5 Optical Output Power Po cw 20 Threshold Current Ith cw 55 Operation Current Iop Po = 20 mW 160 Forward Voltage Uf Po = 20 mW 2 Lasing Wavelength Po = 20 mW 1520 1550 λp Beam Divergence θ// Po = 20 mW 25 Beam Divergence θ⊥ Po = 20 mW 40 Monitor Current Im Po = 20 mW > 20 100 UNIT mA mW V V °C °C MAX 1580 UNIT µm² mW mA mA V nm ° ° µA