PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 PACKAGE DIMENSIONS 0.697 (17.70) 0.236 (6.00) + D E + CL CL 0.020 (0.50) 0.315 (8.00) 0.039 X 45° CHAMFER (2X) CL OPTICAL C.L. 0.059 (1.50) (2X) 0.295 (7.50) 0.394 (10.00) 0.079 (2.00) 0.138 (3.51) 0.030 (0.76) 0.197 (5.00) 0.543 [13.79] PINS 0.020 (0.51) (4X) SQ. (TYP) SCHEMATIC CL 0.333 (8.46) 2 1 3 4 0.100 (2.54) (2X) (TYP) 1 4 2 3 0.093 (2.36) PIN #1 (ANODE) PIN #3 (COLLECTOR) PIN #2 (CATHODE) PIN #4 (EMITTER) NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. T Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QVE00034 is a slotted optical switch designed for multipurpose non-contact sensing. It consists of a GaAs LED and a silicon photo-transistor packaged into an injection molded housing and facing each other across a 0.315" (8.0 mm) gap. The housing is featuring locating knobs for accurate mounting. FEATURES • No contact switching • 8mm wide slot • 0.5 mm aperture width • Opaque black plastic housing • Locating knobs on housing base for accurate mounting • Transistor Output © 2003 Fairchild Semiconductor Corporation Page 1 of 5 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Symbol Rating Units TOPR -55 to +100 °C TSTG -55 to +100 °C Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 50 mA Reverse Voltage VR 6 V PD 100 mW Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 4.5 V Collector Current IC 20 mA Power Dissipation(1) PD 150 mW Storage Temperature EMITTER Power Dissipation(1) SENSOR NOTES 1. Derate power dissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16" (1.6mm) from housing. ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS EMITTER Forward Voltage IF = 20 mA VF — 1.2 1.5 V Reverse Current VR = 4 V IR — — 10 µA Peak Emission Wavelength IF = 20 mA λPE — 940 — nm — — 200 nA — — 3 µA SENSOR Dark Current VCE = 10 V, IF = 0 mA VCE = 2.5 V, IF = 0 mA, TA = -40°C to +85°C ID COUPLED Collector Current IF = 20 mA, VCE = 10 V IC(ON) 0.5 — 14 mA Collector Emitter Saturation Voltage IF = 20 mA, IC = 0.1 mA TA = -40°C to +85°C VCE (SAT) — — 0.4 V Rise Time VCC = 5 V, RL = 100 Ω IC = 5 µA tr — 4 — tf — 4 — Fall Time © 2003 Fairchild Semiconductor Corporation Page 2 of 5 µs 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 TYPICAL PERFORMANCE CURVES Fig. 2 Collector Current vs. Shield Distance Fig. 1 Collector Current vs. Shield Distance TA=25°C IF=20mA V CE=5V 0.8 TA=25°C IF=20mA V CE=5V 1.0 Ic(on) -Normalized Collector Current Ic(on) -Normalized Collector Current 1.0 Normalized to value with shield removed 0.6 Black Shield 0.4 + E d2 0 D + 0.2 0.0 0.8 0.6 0.4 Black Shield d1 0 0.2 0.0 0 1 2 3 4 5 6 0 2 d2-Shield Distance(mm) 4 6 8 d1-Shield Distance(mm) Fig. 4 Collector-Emitter Voltage vs. Temperature Fig. 3 Collector-Emitter Voltage vs. Collector Current 5 1.9 TA = 25˚C 4.5 IF = 20 mA, IC = 0.1 mA IF = 40 mA 1.4 IF = 10 mA, IC = 0.05 mA VCE NORMALIZED 4 IF = 30 mA 3.5 ICE (mA) Normalized to value with shield removed 3 IF = 20 mA 2.5 2 1.2 1 0.8 IF = 30 mA, IC = 0.15 mA 0.6 IF = 10 mA 1.5 0.4 Normalized to IF = 20 mA, IC = 0.1 mA, TA = 25˚C 1 0.2 0.5 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 VCE (V) © 2003 Fairchild Semiconductor Corporation -50 -25 0 25 50 75 100 TEMP(C) Page 3 of 5 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 Fig. 5 Collector Current vs. Temperature Fig. 6 Collector Current vs. Forward Current 3 5 IF = 100 mA 2.5 ICE NORMALIZED ICE NORMALIZED 4.5 Normalized to IF = 20 mA, VCE = 5 V, TA = 25˚C 4 IF = 60 mA 3.5 3 2.5 2 IF = 30 mA 1.5 2 1.5 TA = 25˚C VCE = 10 V Normalized to IF = 20 mA 1 IF = 20 mA 1 0.5 IF = 10 mA 0.5 IF = 5 mA 0 0 -55 -40 -20 0 20 40 60 80 0 100 5 10 15 20 25 Temp(C) Fig. 7 Rise Time vs. Load Resistance 1.1 T(off) NORMALIZED 0.9 T(on) 0.85 T(off) NORMALIZED TA = 25˚C PW = 300 µs PRR = 100 µs VCC = 5 V Normalized to RL = 2k Ω 1 0.8 0.75 0.7 0.65 0.6 0.55 0.5 1 2 3 4 5 35 40 45 50 55 Fig. 8 Fall Time vs. Load Resistance 1.05 0.95 30 IF (mA) 6 7 8 9 10 4.5 4.25 4 3.75 3.5 3.25 3 2.75 2.5 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 TA = 25˚C PW = 300 µs PRR = 100 µs VCC = 5 V Normalized to RL = 2k Ω T(off) 1 2 3 4 RL(kΩ) 5 6 7 8 9 10 RL(kΩ) Fig. 9 Forward Voltage vs. Forward Current 55 50 45 TA = 30˚C 40 IF (mA) 35 TA = 25˚C 30 TA = 70˚C 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VF(V) © 2003 Fairchild Semiconductor Corporation Page 4 of 5 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 5 of 5 4/14/03