FAIRCHILD RMPA2456

March 2005
RMPA2456
2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Features
General Description
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The RMPA2456 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias
control provides power saving shutdown capability. The PA’s
industry leading low power consumption and excellent linearity
are achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) technology.
31.5dB small signal gain
27dBm output power @ 1dB compression
100mA total current at 19dBm modulated power out
2.8% EVM at 19 dBm modulated power out
3.3V supply operation
Power saving shutdown options (bias control)
Integrated power detector with 20dB dynamic range
Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package
Internally matched to 50 Ohms and DC blocked RF input/
output
■ Optimized for use in 802.11b/g applications
Device
Electrical Characteristics1 802.11g OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min
Typ
Max
Units
Frequency
2.4
2.5
GHz
Collector Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Current
3.3
mA
Gain
31.5
dB
Total Current @ 19dBm POUT
100
mA
EVM @ 19dBm POUT2
2.8
%
Detector Output @ 19dBm POUT
775
mV
5
dBm
Detector Threshold3
Notes:
1. VC1, VC2, VC3 = 3.3V, VM123 = 3.3V, TA = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. POUT measured at PIN corresponding to power detection threshold.
©2005 Fairchild Semiconductor Corporation
RMPA2456 Rev. C
1
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RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Preliminary
(RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth
Parameter
Min
Typ
Max
Units
2.5
GHz
Frequency
2.4
Collector Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Current
3.3
mA
Gain
32
dB
Total Current @ 19dBm Pout
130
mA
First Side Lobe Power @ 19dBm Pout
-36
dBm
Second Side Lobe Power @ 19dBm Pout
-60
dBm
Max Pout Spectral Mask Compliance2
24
dBm
Detector Output @ 19dBm Pout
Detector Pout Threshold3
1.15
V
5
dBm
Electrical Characteristics1 Single Tone
Parameter
Min
Frequency
2.4
Collector Supply Voltage
3.0
Mirror Supply Voltage (VM123)
3.0
Gain
Typ
Max
Units
2.5
GHz
3.3
3.6
V
3.3
3.6
V
31.5
dB
Total Quiescent Current
49
mA
Bias Current at pin VM1234
3.2
mA
P1dB Compression
27
dBm
Current @ P1dB Compression
600
mA
Shutdown Current (VM123 = 0V)
<1.0
µA
12
dB
9
dB
2.4
V
Input Return Loss
Output Return Loss
Detector Output at P1dB Compression
Detector
Pout Threshold3
5
V
Turn-on Time5
<1.0
µS
Spurious (Stability)6
-65
dBc
Notes:
1. VC1, VC2, VC3 = 3.3V, VM123 = 3.3 Volts, Ta = 25°C, PA is constantly biased, 50Ω system.
2. PIN is adjusted to point where performance approaches spectral mask requirements.
3. POUT measured at PIN corresponding to power detection threshold.
4. Mirror bias current is included in the total quiescent current.
5. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB.
6. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
2
RMPA2456 Rev. C
www.fairchildsemi.com
RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Electrical Characteristics1 802.11b CCK Modulation
Symbol
Parameter
Ratings
Units
VC1, VC2, VC3
Positive Supply Voltage
5
V
IC1, IC2, IC3
Supply Current
IC1
IC2
IC3
50
150
700
mA
mA
mA
VM123
Positive Bias Voltage
4.0
V
PIN
RF Input Power
+5
dBm
TCASE
Case Operating Temperature
-40 to +85
°C
TSTG
Storage Temperature
-55 to +150
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
RF IN
GND
VDET
GND
14
13
VOLTAGE
DETECTOR
1
12
2
11
3
4
10
INPUT
MATCH
GND
5
OUTPUT
MATCH
6
7
9
8
3
RMPA2456 Rev. C
VC3
N/C
GND
RF OUT
Pin
Description
1
VM123
2
VC2
3
GND
4
RF IN
5
GND
6
VC1
7
GND
8
GND
9
RF OUT
10
GND
11
N/C
12
VC3
13
GND
14
VDET
15
GND
16
GND
GND
GND
15
GND
VC2
16
VC1
VM123
GND
Functional Block Diagram
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RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Absolute Ratings1
RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Performance Data 802.11g OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Measured EVM Vs. Modulated Power Out
VC=3.3V VM=3.3V T=25°C
Gain Vs. Modulated Power Out
VC=3.3V VM=3.3V T=25°C
8
34
Note: Uncorrected EVM. Source EVM is approximately 0.8%.
7
32
5
Gain (dB)
Total Measured MVE (%)
33
6
2.40 GHz
2.45 GHz
2.50 GHz
4
31
3
30
2.40 GHz
2.45 GHz
2.50 GHz
2
29
1
28
0
5
7
9
11
13
15
17
19
21
5
23
7
9
11
13
Modulated Power Out (dBm)
15
17
19
21
23
25
23
25
Modulated Power Out (dBm)
Total Current Vs. Modulated Power Out
VC=3.3V VM=3.3V T=25°C
Detector Voltage Vs. Modulated Power Out
VC=3.3V VM=3.3V T=25°C
250
1400
1200
Detector Voltage (mV)
Total Current (mA)
200
150
2.40 GHz
2.45 GHz
2.50 GHz
100
1000
2.40 GHz
2.45 GHz
2.50 GHz
800
600
50
400
0
200
5
7
9
11
13
15
17
19
21
23
25
5
7
9
11
Modulated Power Out (dBm)
13
15
17
19
21
Modulated Power Out (dBm)
Single Tone
S-Parameters Vs. Frequency
VC=3.3V VM=3.3V T=25°C
Gain Vs. Single Tone Power Out
VC=3.3V VM=3.3V T=25°C
0
35
34
33
S21 (dB)
30
-5
25
-10
2.40 GHz
2.45 GHz
2.50 GHz
30
29
S11 (dB)
20
S11, S22 (dB)
31
S21 (dB)
Gain (dB)
32
-15
S22 (dB)
28
27
5
7
9
11
13
15
17
19
21
23
25
15
2.35
27
2.45
2.5
-20
2.55
Frequency (GHz)
Single Tone Power Out (dBm)
4
RMPA2456 Rev. C
2.4
www.fairchildsemi.com
RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Schematic
16
15
14
13
1
12
2
11
3
10
4
9
5
6
7
8
Backside Ground
Package Outline
Dimensions in mm
Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side.
5
RMPA2456 Rev. C
www.fairchildsemi.com
Qty
Item No.
1
1
F100039
2
2
#142-0701-841
SMA Connector
Johnson
7
3
#S1322-XX-ND
RT Angle Sgl M Header
Digikey
Ref
4
1
5 (C3)
2
6 (C1, C2)
3
7 (C4, C5, C6)
2
Part Number
Description
PC Board
Vendor
Fairchild
F1XXXXX
Assembly, RMPA2456
Fairchild
06035A150J
15pF Capacitor
AVX
GRM39C0G330J50D500
33pF Capacitor
Murata
CC1206JX5R106M
10µF Capacitor
TDK
8 (L2, L3)
LLV1005FB5N6S
5.6nH Inductor
Toko
1
9 (L1)
LLV1005FH15NK
15nH Inductor
Toko
A/R
10
SN63
Solder Paste
Indium Corp.
A/R
11
SN96
Solder Paste
Indium Corp.
Evaluation Board Layout
C5
C6
C2
L2
C1
L3
C3
L1
C4
Actual Board Size = 2.0" X 1.5"
6
RMPA2456 Rev. C
www.fairchildsemi.com
RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board of Materia
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND) pin
on the board.
8) Apply input RF power to SMA connector pin RFIN. Currents
in pins VC1, VC2 and VC3 will vary depending on the input drive
level.
2) Connect voltmeter to pin DT1 (VDET, voltage detector).
9) Vary positive voltage on pin VM123 from +3.3 V to +0 V to
shut down the amplifier or alter the power level. Shut down current flow into the pins:
3) Apply positive supply voltage VC1 (=3.3 V) to pin VC1 (first
stage collector).
4) Apply positive supply voltage VC2 (=3.3 V) to pin VC2 (second stage collector).
Pin
Current
5) Apply positive supply voltage VC3 (=3.3 V) to pin VC3 (third
stage collector).
VC1
<1 nA
VC2
<1 nA
6) Apply positive bias voltage VM123 (=3.3 V) to pin VM123
(bias networks).
VC3
<1 nA
Recommended turn-off sequence:
7) At this point, you should expect to observe the following positive currents flowing into the pins:
Use reverse order described in the turn-on sequence above.
Pin
Current
Note:
VM123
1.0 – 5.0 mA
1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
VC1
1.0 – 9.0 mA
VC2
3.0 – 23.0 mA
VC3
15.0 – 35.0 mA
7
RMPA2456 Rev. C
www.fairchildsemi.com
RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Turn-On Sequence1
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
8
RMPA2456 Rev. C
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RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
TRADEMARKS