RS2001M RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RS2007M SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes FEATURES * * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 300 amperes peak Ideal for printed cikcuit boakds High forward surge current capability RS-20M MECHANICAL DATA .189 (4.8) f.134 (3.1) .122 (3.1) .197 (5) .134 (3.4) .165 (4.2) .150 (3.8) .708 (18.0) .669 (17.0) .106 (2.7) .096 (2.3) .094 (2.4) .078 (2.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .173 (4.4) .150 (3.8) 1.193 (30.3) 1.169 (29.7) .800 (20.3) .697 (17.7) .441 (11.2) .425 (10.8) * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O .114 (2.9) .098 (2.5) .031 (0.8) .043 (1.1) .035 (0.9) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. .023 (0.6) .402 (10.2) .386 (9.8) For capacitive load, derate current by 20%. .303 (7.7) .287 (7.3) .303 (7.7) .287 (7.3) Dimensions in inches and (millimeters) -MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL RATINGS RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Output Current at Tc = 100o C with heatsink Peak Forward Surge Current 8.3 ms single half sine-wave IO 20 Amps I FSM 300 Amps T J, T STG -55 to + 150 superimposed on rated load Operating and Storage Temperature Range 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage Drop per element at 10A DC Maximum Reverse Current at Rated @T A = 25 oC DC Blocking Voltage per element @T C = 100 oC VF RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS 1.1 Volts 10 uAmps 0.2 mAmps IR 2001-5 RATING AND CHARACTERISTIC CURVES (RS2001M THRU RS2007M) POWER DISSIPATION 60 30 sine wave Tj=150 20 10 5 2 50 POWER DISSIPATION PF(W) INSTANTANEOUS FORWARD CURRENT, (A) TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS TC = 150 (TYP) TC = 25 (TYP) 1 0.5 40 30 20 10 0.2 pulse test per one diode 0.1 0.2 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 AVERAGE FORWARD CURRENT, (A) sine wave IFSM PEAK FORWARD SURGE CURRENT, (A) 4 300 0 8.3ms 8.3ms 1 cycle non-repetitive Tj=25 250 200 2 5 10 20 50 16 20 24 3 P.C.B soldering land 5mmf sine wave R-load free in air 2 1 0 0 100 40 80 120 160 AMBIENT TEMPERATURE, ( TYPICAL FORWARD CURRENT DERATING CURVE ) CONTACT THERMAL RESISTANCE fcf 1 22 with thermal compound heatsink Tc Tc 0.9 /W) 20 18 sine wave R-load on heatsink 16 14 90 100 110 120 130 140 CASE TEMPERATURE, ( ) 150 160 THERMAL RESISTANCE ( AVERAGE FORWARD CURRENT, (A) 12 on glass-epoxi substrate NUMBER OF CYCLE 12 80 8 TYPICAL FORWARD CURRENT DERATING CURVE SURGE FORWARD CURRENT CAPABILITY 150 1 4 AVERAGE RECTIFIED FORWARD CURRENT, Io (A) INSTANTANEOUS FORWARD VOLTAGE, (V) 0.8 0.7 0.6 0.5 0.4 2 3 4 5 6 7 MOUNTING TORQUE (Kg.cm) RECTRON 8