ASEMI RS2006M

RS2001M
THRU
RS2007M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes
FEATURES
*
*
*
*
*
*
Low leakage
Low forward voltage
Mounting position: Any
Surge overload rating: 300 amperes peak
Ideal for printed cikcuit boakds
High forward surge current capability
RS-20M
MECHANICAL DATA
.189 (4.8)
f.134 (3.1)
.122 (3.1)
.197 (5)
.134 (3.4)
.165 (4.2)
.150 (3.8)
.708 (18.0)
.669 (17.0)
.106 (2.7)
.096 (2.3)
.094 (2.4)
.078 (2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.173 (4.4)
.150 (3.8)
1.193 (30.3)
1.169 (29.7)
.800 (20.3)
.697 (17.7)
.441 (11.2)
.425 (10.8)
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.114 (2.9)
.098 (2.5)
.031 (0.8)
.043 (1.1)
.035 (0.9)
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
.023 (0.6)
.402 (10.2)
.386 (9.8)
For capacitive load, derate current by 20%.
.303 (7.7)
.287 (7.3)
.303 (7.7)
.287 (7.3)
Dimensions in inches and (millimeters)
-MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
SYMBOL
RATINGS
RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Bridge Input Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Rectified Output Current at Tc = 100o C
with heatsink
Peak Forward Surge Current 8.3 ms single half sine-wave
IO
20
Amps
I FSM
300
Amps
T J, T STG
-55 to + 150
superimposed on rated load
Operating and Storage Temperature Range
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
VF
Maximum Forward Voltage Drop per element at 10A DC
o
Maximum Reverse Current at Rated
@T A = 25 C
DC Blocking Voltage per element
@T C = 100 oC
RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS
1.1
Volts
10
uAmps
0.2
mAmps
IR
RS2001M
THRU
RS2007M
RATING AND CHARACTERISTIC CURVES (RS2001M THRU RS2007M)
POWER DISSIPATION
60
30
sine wave
Tj=150
20
10
5
2
50
POWER DISSIPATION PF(W)
INSTANTANEOUS FORWARD CURRENT, (A)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
TC = 150 (TYP)
TC = 25 (TYP)
1
0.5
40
30
20
10
0.2
pulse test
per one diode
0.1
0.2
0
0.4
0.6
0.8
1
1.2
1.4
1.6
0
AVERAGE FORWARD CURRENT, (A)
IFSM
PEAK FORWARD SURGE CURRENT, (A)
4
sine wave
0
8.3ms 8.3ms
1 cycle
non-repetitive
Tj=25
250
200
2
5
10
20
50
16
20
24
3
P.C.B
soldering land 5mmf
sine wave
R-load
free in air
2
1
0
0
100
40
80
120
160
AMBIENT TEMPERATURE, (
TYPICAL FORWARD CURRENT
DERATING CURVE
)
CONTACT THERMAL RESISTANCE fcf
1
22
with thermal compound
heatsink
Tc
Tc
0.9
/W)
20
18
sine wave
R-load
on heatsink
16
14
90
100 110 120 130 140
CASE TEMPERATURE, (
)
150 160
THERMAL RESISTANCE (
AVERAGE FORWARD CURRENT, (A)
12
on glass-epoxi substrate
NUMBER OF CYCLE
12
80
8
TYPICAL FORWARD CURRENT
DERATING CURVE
SURGE FORWARD CURRENT CAPABILITY
300
150
1
4
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
0.8
0.7
0.6
0.5
0.4
2
3
4
5
6
7
MOUNTING TORQUE (Kg.cm)
8