RU8205G N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 20V/6A, RDS (ON) =21mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged TSSOP-8 • Lead Free and Green Available Applications • Power Management Absolute Maximum Ratings Symbol Dual N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1.7 A TA=25°C 24 TA=25°C 6 TA=70°C 4.5 TA=25°C 1.5 TA=70°C 0.96 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=4.5V) PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 ① A A 83.5 W °C/W www.ruichips.com RU8205G Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU8205G Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ VGS=0V, IDS=250µA V 20 VDS=20V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±10V, VDS=0V 30 0.5 0.7 µA 1.5 V ±100 nA VGS=4.5V, IDS=6A 21 24 mΩ VGS=2.5V, IDS=5A 30 40 mΩ 1 V Drain-Source On-state Resistance Diode Characteristics VSD ③ Diode Forward Voltage ISD=1A, VGS=0V ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz 1.8 VGS=0V, VDS=10V, Frequency=1.0MHz 580 Ω pF 120 95 5 VDD=10V, RL=1.7Ω, IDS=6A, VGEN=4.5V, RG=6Ω Turn-off Fall Time 11 ns 38 13 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 10 VDS=16V, VGS=4.5V, IDS=6A 1.5 14 nC 3.4 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 2 www.ruichips.com RU8205G Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU8205G Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU8205G Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU8205G Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 6 www.ruichips.com RU8205G Ordering and Marking Information RU8205 Package (Available) G : TSSOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 7 www.ruichips.com RU8205G Package Information TSSOP-8 SYMBOL MM INCH MIN MAX MIN MAX D 2.900 3.100 0.114 0.122 E 4.300 4.500 0.169 b 0.190 0.300 0.007 c 0.090 0.200 E1 6.250 6.550 A MM SYMBOL INCH MIN MAX MIN MAX A2 0.800 1.050 0.031 0.041 0.177 A1 0.050 0.150 0.002 0.006 0.012 e 0.004 0.008 L 0.246 0.258 H 0.047 θ 1.200 0.65 (BSC) 0.500 0.700 0.25(TYP) 0° 8° 0.026 (BSC( 0.020 0.028 0.01(TYP) 0° 8° ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 8 www.ruichips.com RU8205G Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 9 www.ruichips.com