RU3060K N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 30V/53A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =13mΩ(tpy.)@VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Fast Switching and Fully Avalanche Rated TO251 • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer, Portable Equipment and DC/DC Converters. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 53 A TC=25°C 212 TC=25°C 53 TC=100°C 41 TC=25°C 50 TC=100°C 25 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① A ② A W 3 °C/W 110 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 www.ruichips.com RU3060K Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Test Condition RU3060K Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VGS=0V, IDS=250µA VDS= 30V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V ④ V 30 30 1.5 2 µA 2.7 V ±100 nA VGS= 10V, IDS=30A 9 12 mΩ VGS= 4.5V, IDS=25A 13 17 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=30A, VGS=0V 24 ns 16 nC VGS=0V,VDS=0V,F=1MHz 1.2 Ω VGS=0V, VDS=20V, Frequency=1.0MHz 780 ISD=30A, dlSD/dt=100A/µs ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 190 70 6 VDD=20V, RL=15Ω, IDS=30A, VGEN= 10V, RG=6Ω Turn-off Fall Time 8 ns 20 4 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 15 VDS=20V, VGS= 10V, IDS=30A 2.5 20 nC 4 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Current limited by bond wire. Limited by TJmax, IAS =21A, VDD = 20V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 2 www.ruichips.com RU3060K Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU3060K Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU3060K Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU3060K Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 6 www.ruichips.com RU3060K Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU3060K RU3060K TO-251 Tube 80 - - Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 7 www.ruichips.com RU3060K Package Information TO251 SYMBOL MM INCH MIN MAX MIN MAX A 2.200 2.4 0.087 0.094 A1 1.050 1.350 0.042 B 1.350 1.650 0.053 b 0.500 0.700 b1 0.700 c 0.430 c1 0.430 MM SYMBOL INCH MIN MAX MIN MAX D 6.350 6.650 0.250 0.262 0.054 D1 5.200 5.400 0.205 0.213 0.065 E 5.400 5.700 0.213 0.224 0.020 0.028 e 0.900 0.028 0.035 e1 4.500 4.700 0.177 0.185 0.580 0.017 0.023 L 7.500 7.900 0.295 0.311 0.580 0.017 0.023 2.300 TYP 0.091 TYP ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 8 www.ruichips.com RU3060K Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2011 9 www.ruichips.com