1.8V Drive Nch MOSFET RUE003N02 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET EMT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (1)Source (2)Gate Abbreviated symbol : QT (3)Drain Applications Switching Packaging specifications Package Type Equivalent circuit Taping Drain TL Code Basic ordering unit (pieces) 3000 RUE003N02 Gate ∗2 ∗1 Source ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±8 V ID ±300 mA IDP∗1 ±600 mA Total power dissipation PD∗2 150 mW Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C Continuous Drain current Pulsed ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Thermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 833 °C / W ∗ Each terminal mounted on a recommended land www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/3 2011.05 - Rev.B RUE003N02 Data Sheet Electrical characteristics (Ta=25C) Symbol Parameter Min. Typ. Max. Unit Conditions IGSS − − 10 μA VGS=±8V, VDS=0V Drain-source breakdown voltage V(BR)DSS 20 − − V ID=1mA, VGS=0V Zero gate voltage drain current IDSS − − 1.0 μA VDS=20V, VGS=0V Gate threshold voltage VGS(th) 0.3 − 1.0 V VDS=10V, ID=1mA Static drain-source on-state resistance − 0.7 1.0 RDS(on)∗ Ω ID=300mA, VGS=4.0V Gate-source leakage − 0.8 1.2 Ω ID=300mA, VGS=2.5V − 1.0 1.4 Ω ID=300mA, VGS=1.8V Forward transfer admittance |Yfs| ∗ 400 − − ms ID=300mA, VDS=10V Input capacitance Ciss − 25 − pF VDS=10V Output capacitance Coss − 10 − pF VGS=0V Reverse transfer capacitance Crss − 10 − pF f=1MHz Turn-on delay time td(on) ∗ − 5 − ns ID=150mA, VDD tr ∗ − 10 − ns VGS=4.0V td(off) ∗ tf ∗ − 15 − ns RL=67Ω − 10 − ns RG=10Ω Rise time Turn-off delay time Fall time 10V ∗ Pulsed Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol VSD ∗ Forward voltage Min. Typ. Max. − − 1.2 Unit V Conditions IS= 100mA, VGS=0V ∗ Pulsed Electrical characteristic curves 10 0.1 0.01 Ta=125°C 75°C 25°C −25°C 0.0001 0.00001 0.0 0.5 1.0 Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 1.5 GATE-SOURCE VOLTAGE : VGS (V) 1 SOURCE CURRENT : IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 1 0.1 0.01 1 1 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current (ΙΙΙ) www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ Ta=125°C 75°C 25°C −25°C 0.01 0.0 0.5 1 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Source current vs. source-drain voltage 2/3 1 Fig.3 Static drain-source on-state resistance vs. drain current (ΙΙ) 100 VGS=0V Pulsed 0.1 0.1 DRAIN CURRENT : ID (A) Fig.2 Static drain-source on-state resistance vs. drain current (Ι) VGS=1.8V Pulsed VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : ID (A) Fig.1 Typical transfer characteristics 10 0.1 CAPACITANCE : C (pF) 0.001 10 VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 1 VDS=10V Pulsed 1.5 Ta=25°C f=1MHZ VGS=0V Ciss 10 Crss 1 0.01 0.1 1 Coss 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.6 Typical capacitance vs. drain-source voltage 2011.05 - Rev.B RUE003N02 Data Sheet SWITHING TIME : t (ns) 1000 Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed 100 td(off) tf td(on) 10 tr 1 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.7 Switching characteristics Switching characteristics measurement circuit Pulse width VGS RG ID VDS D.U.T. VGS 90% 50% 10% 50% RL 10% VDS 10% VDD 90% 90% td (on) tr td (off) toff ton Fig.8 Switching time measurement circuit www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ tf Fig.9 Switching time waveforms 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A